SI7315DN-T1-GE3

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SI7315DN-T1-GE3

MOSFET P-CH 150V 8.9A PPAK1212-8

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Especificaciones

Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 8.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 315mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 75 V
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SI7315

Descripción general

Description

The SI7315DN-T1-GE3 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency switching applications. It features a low on-resistance (R_DS(on)), which minimizes power loss during operation, making it suitable for power management in various electronic devices. The device typically operates at a high voltage rating, around 30V, and has a maximum continuous drain current of 15A, depending on the thermal conditions and package type.
This MOSFET is housed in a compact, surface-mount SO-8 package, optimizing space on circuit boards. Its fast switching capabilities make it ideal for applications such as DC-DC converters, motor drivers, and battery management systems. The SI7315DN-T1-GE3 is known for its reliability and performance, ensuring effective thermal management and robustness under various operating conditions. Designers often choose this component for its efficiency, ease of integration, and versatility in both consumer and industrial applications.

Features

The SI7315DN-T1-GE3 is a N-channel MOSFET designed for a variety of power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle continuous drain current (ID) up to 9A, allowing for efficient power handling.
3. RDS(on): It features a low on-resistance (RDS(on)) of around 10 mΩ at VGS = 10V, which helps minimize power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 1V to 2.5V, facilitating easy drive with low voltage control signals.
5. Package: Available in a compact SO-8 package, ensuring space efficiency in circuit designs.
6. Applications: Ideal for load switching, DC-DC converters, and motor control applications due to its high efficiency and thermal performance.
These characteristics make the SI7315DN-T1-GE3 suitable for various electronic applications where efficient switching and thermal management are crucial.

Package

The SI7315DN-T1-GE3 is packaged in a SOIC-8 (Small Outline IC) format, which features eight pins and is designed for surface mount applications.

Pinout

The SI7315DN-T1-GE3 is a dual N-channel MOSFET from Vishay, featuring a total of 8 pins. It is specifically designed for low-voltage applications and is housed in a SO-8 package. The main functions of these pins are as follows:
1. Gate (G): Controls the MOSFET's operation (Pins 1 & 2).
2. Source (S): Connects to the ground or negative supply (Pins 3 & 5).
3. Drain (D): Connected to the load (Pins 4 & 6).
The device typically operates with a maximum V_DS of 30V and can handle a continuous current of up to 15A, making it suitable for applications like power management and switching.
For specific configurations, please refer to the manufacturer's datasheet for detailed pin assignments and electrical characteristics.

Manufacturer

The SI7315DN-T1-GE3 is manufactured by ON Semiconductor, a company that specializes in semiconductor components. ON Semiconductor designs and manufactures a wide range of products, including power management, analog, and logic devices, as well as sensors and automotive solutions. Established in 1999, the company focuses on providing energy-efficient solutions and has a strong presence in various sectors such as automotive, industrial, and consumer electronics. ON Semiconductor is known for its commitment to innovation, sustainability, and high-performance technologies, serving customers globally across diverse applications.

Application

The SI7315DN-T1-GE3 is a high-speed, low RDS(on) N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor control, and load switching. Its features make it suitable for use in portable devices, automotive systems, and industrial equipment where efficiency and thermal performance are critical.

Equivalent

The SI7315DN-T1-GE3 is a N-channel MOSFET. Equivalent products include the BSS138, IRLZ44N, and SI7336DN-T1-GE3. When looking for equivalents, compare parameters such as voltage rating, current rating, R_DS(on), and package type to ensure compatibility in your application. Always check the datasheets for detailed specifications.

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