SI7155DP-T1-GE3

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SI7155DP-T1-GE3

MOSFET P-CH 40V 31A/100A PPAK

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET® Gen III
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 31A (Ta), 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 3.6mOhm @ 20A, 10V
Vgs(th)(Max)@Id 2.3V @ 250µA
GateCharge(Qg)(Max)@Vgs 330 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 12900 pF @ 20 V
PowerDissipation(Max) 6.25W (Ta), 104W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Descripción general

Description

The SI7155DP-T1-GE3 is a high-performance n-channel MOSFET designed for use in various applications such as power management, automotive, and industrial systems. It features a low on-resistance (RDS(on)), which enhances efficiency by minimizing power loss during operation. The device typically accommodates high-speed switching and can handle significant current levels, making it suitable for applications requiring rapid switching and high load capabilities.
This MOSFET comes in a compact package, facilitating space-saving designs while ensuring reliable thermal performance. The SI7155DP-T1-GE3 also features a low gate charge, which helps reduce driving power and improves overall system efficiency. Its robust design allows it to withstand various environmental conditions, making it ideal for demanding applications.
Overall, the SI7155DP-T1-GE3 is an effective choice for engineers looking for a reliable, efficient, and compact MOSFET solution.

Features

The SI7155DP-T1-GE3 is a N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: Maximum drain-to-source voltage (V_DSS) of 55V.
2. Current Rating: Continuous drain current (I_D) of 30A at a temperature of 25°C.
3. R_DS(on): Low on-resistance of 7.5 mΩ at V_GS = 10V, ensuring efficient performance and reduced power loss.
4. Gate Threshold Voltage: V_GS(th) ranges from 1V to 2.5V, enabling operation with lower gate drive voltages.
5. Package: Available in a compact SO-8 package for space-saving designs.
6. Thermal Performance: Excellent thermal resistance for high-efficiency operation.
7. Fast Switching: Suitable for high-frequency applications due to low gate charge (Q_G).
These features make the SI7155DP-T1-GE3 suitable for applications such as synchronous rectification, power supply switching, and motor control.

Package

The SI7155DP-T1-GE3 is packaged in a 5-lead TSOT-23 (Thin Small Outline Transistor) package. This compact surface mount package is designed for space-constrained applications, providing efficient thermal performance and ease of handling during assembly.

Pinout

The SI7155DP-T1-GE3 is a N-channel MOSFET from Vishay with a total of 8 pins. Its primary functions include serving as a power switch in various applications, such as load switching and power management. The specific pinout is as follows:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The main output where the load is connected.
3. Source (S): Ground or supply voltage connection.
The device features low on-resistance, high-speed switching, and is designed for high-efficiency operation in applications like power supplies and motor drives.
For detailed specifications, refer to the manufacturer's datasheet, which provides information on maximum ratings, thermal characteristics, and electrical parameters.

Manufacturer

The SI7155DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is known for its extensive product portfolio, which includes diodes, capacitors, resistors, and various other electronic components. Vishay serves a wide range of industries, including automotive, industrial, computing, telecommunications, and consumer electronics. Its focus on innovation and quality has established Vishay as a key player in the electronic component market.

Application

The SI7155DP-T1-GE3 is a N-channel MOSFET used in various applications including power management, switching power supplies, motor control, and DC-DC converters. Its low RDS(on) and fast switching capabilities make it suitable for high-efficiency designs in consumer electronics, automotive systems, and industrial automation. Additionally, it can be utilized in battery management systems and renewable energy applications.

Equivalent

The SI7155DP-T1-GE3 is a N-channel MOSFET. Equivalent products include the IRLZ44N, BSS138, and FQP30N06L. Always verify specifications such as voltage, current ratings, and package type to ensure compatibility in your specific application.

Envío

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