SI4401BDY-T1-GE3

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SI4401BDY-T1-GE3

MOSFET P-CH 40V 8.7A 8SO

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 8.7A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 14mOhm @ 10.5A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 55 nC @ 5 V
Vgs(Max) ±20V
PowerDissipation(Max) 1.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SOIC

Descripción general

Description

The SI4401BDY-T1-GE3 is a low-voltage, dual N-channel MOSFET designed for applications in power management and switching. It features low on-resistance, which enhances efficiency, making it suitable for use in battery-powered devices, automotive applications, and power supply circuits. The device is built on a silicon technology that supports fast switching speeds, facilitating high-frequency operation.
Key specifications include a maximum drain-source voltage (VDS) of 30V, a maximum continuous drain current (ID) of 5.5A, and a low gate threshold voltage, which enables easy interfacing with low-voltage control signals. The package type is a compact SO-8, allowing for space-efficient designs.
In terms of thermal performance, the MOSFET can handle adequate power dissipation, making it reliable for demanding applications. Overall, the SI4401BDY-T1-GE3 is well-suited for applications such as DC-DC converters, load switches, and other power management scenarios where efficiency and performance are critical.

Features

The SI4401BDY-T1-GE3 is a N-channel MOSFET designed for low-voltage, high-speed applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V.
2. Current Rating: The continuous drain current (ID) is rated at 8.5A, making it suitable for various power management tasks.
3. RDS(on): The on-resistance is low, typically around 9.5 mΩ at VGS = 10V, ensuring efficient operation and reducing power losses.
4. Gate Threshold Voltage (VGS(th)): The threshold voltage ranges from 1V to 3V, allowing for compatibility with low-voltage driving signals.
5. Package Type: It comes in a compact SO-8 package, facilitating easy integration into tight PCB layouts.
6. Fast Switching: The device supports fast switching speeds, which is ideal for applications requiring quick response times.
7. Applications: Commonly used in DC-DC converters, power management, and load switching in consumer electronics.
These features make the SI4401BDY-T1-GE3 a versatile choice for various electronic applications.

Package

The SI4401BDY-T1-GE3 is packaged in a SOT-23-6 style, which is a 6-lead, small-outline transistor package. This package type is commonly used for its compact size and suitability in various applications, such as RF switches and amplifiers.

Pinout

The SI4401BDY-T1-GE3 is a high-performance N-channel MOSFET with a total of 8 pins. Its primary functions include switching and amplifying electronic signals in various applications, such as power management, motor control, and load switching.
Here’s a breakdown of the pin configuration:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The terminal through which the current exits the MOSFET.
3. Source (S) - The terminal through which the current enters the MOSFET.
4. Gate (G) - Another gate connection for enhanced control in some configurations.
5-8. Additional Pins - Typically for thermal and electrical connections, depending on the specific package and application.
The SI4401BDY-T1-GE3 features low on-resistance, high-speed switching capabilities, and is suitable for various electronic applications requiring efficient power management.

Manufacturer

The SI4401BDY-T1-GE3 is manufactured by Silicon Labs, a company known for designing and developing innovative semiconductor and software solutions. Silicon Labs specializes in microcontrollers, sensors, and wireless technologies, catering to a variety of applications including Internet of Things (IoT), industrial automation, and automotive sectors. Their products focus on enabling connectivity, efficiency, and performance across diverse electronic devices.

Application

The SI4401BDY-T1-GE3 is a low-voltage N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, load switching, motor control, and battery management systems. It is suitable for portable devices, consumer electronics, and industrial automation due to its high efficiency and fast switching capabilities.

Equivalent

The SI4401BDY-T1-GE3 is a N-channel MOSFET known for its low on-resistance and high-speed switching capabilities. Equivalent products include the BSS138, IRF520, and 2N7000 MOSFETs, depending on specific application requirements such as voltage and current ratings. Always check the datasheet for exact specifications to ensure compatibility.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

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EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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