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SI2369DS-T1-GE3
MOSFET P-CH 30V 7.6A TO236
- Fabricante
- Mfr. Parte #SI2369DS-T1-GE3
- Paquete SOT23-3
- Hoja de datos SI2369DS-T1-GE3 DataSheet
- En stock2589
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 7.6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 29mOhm @ 5.4A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 36 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1295 pF @ 15 V |
| PowerDissipation(Max) | 1.25W (Ta), 2.5W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
Descripción general
Description
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating of up to 10A, depending on the thermal conditions. It has a fast switching speed, which is advantageous for applications requiring rapid on/off control. The device is commonly used in power supplies, motor drivers, and high-frequency switching circuits.
The SI2369DS-T1-GE3 is encapsulated in a compact SO-8 package, facilitating easy integration into dense circuit designs. Its reliability and performance make it a popular choice among engineers for applications in consumer electronics, automotive systems, and industrial controls. For detailed specifications, refer to the manufacturer's datasheet.
Features
1. Voltage Rating: Supports a maximum drain-source voltage of 30V, making it suitable for low-voltage applications.
2. Current Handling: Capable of handling continuous drain currents up to 25A, depending on the thermal conditions.
3. R_DS(on): Offers a low on-resistance of around 10mΩ at Vgs = 10V, which enhances efficiency by minimizing power loss.
4. Fast Switching: Designed for fast switching capabilities, beneficial in high-frequency applications.
5. Thermal Performance: Features a robust thermal performance with a low thermal resistance junction-to-case, allowing for effective heat dissipation.
6. Package Type: Comes in a DPAK package, which is suitable for surface mount applications.
7. Gate Threshold Voltage: Has a gate threshold voltage ranging from 1V to 3V, allowing for operation with lower gate drive voltages.
These features make the SI2369DS-T1-GE3 ideal for use in power supplies, motor drives, and other electronic applications requiring efficient power management.
Package
Pinout
The pin functions are as follows:
1. G (Gate): Controls the switching of the MOSFET.
2. D (Drain): The output where the current flows out when the device is on.
3. S (Source): The input where the current flows in when the device is on.
4. D (Drain): Second drain pin for current sharing and enhanced thermal performance.
5. S (Source): Second source pin for reduced inductance and improved thermal characteristics.
The device is designed for low ON-resistance and fast switching, making it suitable for high-efficiency applications.
Manufacturer
Application
Equivalent
Envío
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Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
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Payment Methods
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