SI2342DS-T1-GE3

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SI2342DS-T1-GE3

MOSFET N-CH 8V 6A SOT-23

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Especificaciones

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 8 V
Current-ContinuousDrain(Id)@25°C 6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 1.2V, 4.5V
RdsOn(Max)@IdVgs 17mOhm @ 7.2A, 4.5V
Vgs(th)(Max)@Id 800mV @ 250µA
GateCharge(Qg)(Max)@Vgs 15.8 nC @ 4.5 V
Vgs(Max) ±5V
InputCapacitance(Ciss)(Max)@Vds 1070 pF @ 4 V
PowerDissipation(Max) 2.5W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Descripción general

Description

The SI2342DS-T1-GE3 is a dual N-channel MOSFET designed for efficient switching applications. It features a low on-resistance, which helps minimize power loss and heat generation during operation. This device is suitable for various applications, including DC-DC converters, power management, and motor control systems.
Key specifications include a maximum drain-source voltage (V_DS) rating of 20V and a maximum continuous drain current (I_D) of up to 6.5A. It also offers high-speed switching capabilities, making it ideal for applications that require rapid switching times. The SI2342DS-T1-GE3 comes in a surface-mount package, facilitating compact designs while ensuring ease of integration into various electronic circuits.
Overall, this MOSFET is a versatile choice for engineers seeking reliable performance in compact electronic designs.

Features

The SI2342DS-T1-GE3 is a dual N-channel MOSFET designed for use in various applications, including power management and switching. Key features include:
1. Configuration: Dual N-channel MOSFET in a compact SOIC-8 package.
2. Voltage Rating: Drain-source voltage (V_DS) up to 30V.
3. Current Rating: Continuous drain current (I_D) of approximately 10A at a temperature of 25°C.
4. Low On-Resistance: R_DS(on) is typically around 12 mΩ, which contributes to reduced power loss and improved efficiency.
5. Fast Switching: Suitable for high-speed switching applications, aiding in faster response times.
6. Thermal Performance: Features a low thermal resistance to manage heat dissipation effectively.
7. Gate Threshold Voltage: V_GS(th) in the range of 1-2.5V, allowing for compatibility with low-voltage drive applications.
These characteristics make the SI2342DS-T1-GE3 ideal for applications like power supplies, DC-DC converters, and motor drivers.

Package

The SI2342DS-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) form factor. This type of packaging is commonly used for surface mount devices and features eight leads for easy integration onto printed circuit boards.

Pinout

The SI2342DS-T1-GE3 is a dual N-channel MOSFET in a 6-lead SOT-23 package. It features a pin count of 6. The primary functions of the pins are as follows:
1. Gate1 (G1): Controls the first N-channel MOSFET.
2. Source1 (S1): Connects to the source of the first N-channel MOSFET.
3. Drain1 (D1): Connects to the drain of the first N-channel MOSFET.
4. Gate2 (G2): Controls the second N-channel MOSFET.
5. Source2 (S2): Connects to the source of the second N-channel MOSFET.
6. Drain2 (D2): Connects to the drain of the second N-channel MOSFET.
These MOSFETs are typically used in power management applications, switching, and signal routing due to their low on-resistance and high-speed performance.

Manufacturer

The SI2342DS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Founded in 1962, the company specializes in producing a wide range of products including diodes, MOSFETs, capacitors, resistors, inductors, and various integrated circuits. Vishay serves multiple markets, including automotive, industrial, consumer electronics, telecommunications, and military/aerospace, providing essential components for modern electronic devices. The SI2342DS-T1-GE3 is a N-channel MOSFET known for its efficiency and performance in various applications.

Application

The SI2342DS-T1-GE3 is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, load switching, and battery management systems. It is suitable for use in consumer electronics, automotive applications, and industrial equipment due to its low on-resistance and fast switching capabilities, enhancing efficiency in power conversion and control circuits.

Equivalent

The SI2342DS-T1-GE3 is an N-channel MOSFET. Equivalent products include the BSS138, SI2302, and AO3400. Ensure to compare key specifications such as voltage rating, current rating, and package type for compatibility. Always verify with the manufacturer's datasheets for exact matches.

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