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SI2328DS-T1-E3
MOSFET N-CH 100V 1.15A SOT23-3
- Fabricante
- Mfr. Parte #SI2328DS-T1-E3
- Paquete
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Especificaciones
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 1.15A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 730mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | SI2328 |
Descripción general
Description
Key features include:
1. N-Channel MOSFET: This indicates that the transistor is an N-channel type, which generally provides faster switching than P-channel MOSFETs.
2. Low On-Resistance: This characteristic ensures minimal power loss and heat generation, improving overall efficiency.
3. Surface Mount Package: The SI2328DS-T1-E3 is typically available in a small SOT-23 package, suitable for compact circuit designs.
4. Applications: Common uses include power management in portable electronics, DC-DC converters, and load switch applications.
5. Voltage and Current Ratings: It is essential to check the datasheet for specific voltage and current ratings to ensure compatibility with your application.
This MOSFET is valued for its efficiency, compact size, and versatility in modern electronic design.
Features
1. P-Channel MOSFET: It operates with a negative gate-source voltage, ideal for high-side switching.
2. Compact Package: Available in a small SOT-23 package, making it suitable for space-constrained applications.
3. Low On-Resistance: Offers low on-state resistance (RDS(on)), ensuring efficient performance with minimal power loss.
4. Fast Switching Speed: Provides rapid switching capabilities, enhancing performance in high-frequency applications.
5. Voltage and Current Ratings: Typically rated for a drain-source voltage (VDS) of about -20V and a continuous drain current (ID) around -3.2A.
6. Thermal Performance: Designed for effective heat dissipation, contributing to reliability and longevity.
7. Applications: Commonly used in load switching, DC-DC converters, battery-powered systems, and power management circuits.
Overall, the SI2328DS-T1-E3's features make it a versatile component for various electronic devices, balancing performance and size efficiency.
Package
Pinout
The functions of the pins are as follows:
1. Pin 1 (Gate): This is the control terminal of the MOSFET. Applying a voltage here controls the conductivity between the source and drain.
2. Pin 2 (Source): This terminal is where the current enters the MOSFET. In a P-channel MOSFET like the SI2328DS, the source is typically connected to a higher voltage.
3. Pin 3 (Drain): This terminal is where the current exits the MOSFET. It is connected to the load in typical configurations.
This MOSFET is used for switching applications and is known for its low on-resistance, making it efficient for power management tasks in various electronic devices.
Manufacturer
Application
Equivalent
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Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
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UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
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Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
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