SI2319DS-T1-E3

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SI2319DS-T1-E3

MOSFET P-CH 40V 2.3A SOT23-3

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  • Mfr. Parte #SI2319DS-T1-E3
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Especificaciones

Series TrenchFET®
Part Status Obsolete
Base Product Number SI2319
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 82mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 20 V
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package TO-236-3, SC-59, SOT-23-3
Packaging Cut Tape (CT), Tape & Reel (TR)

Descripción general

Description

The SI2319DS-T1-E3 is an N-channel MOSFET designed for various electronic applications, including power management, motor control, and switching applications. It features a low on-resistance (RDS(on)) for efficient performance and minimal heat generation, enabling high-speed operation. The device is packaged in a compact surface-mount format (SOT-23), making it suitable for space-constrained designs.
Key specifications include a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 5.8A, depending on thermal conditions. The gate threshold voltage (VGS(th)) typically ranges between 1.0V to 2.0V, allowing for operation with low control voltages.
The SI2319DS-T1-E3 is ideal for applications such as battery management systems, load switching, and LED drivers due to its fast switching capabilities and thermal efficiency. It is also characterized by its robustness, making it suitable for various consumer and industrial electronics.

Features

The SI2319DS-T1-E3 is an N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage power applications.
2. Current Rating: It can handle continuous drain current (I_D) up to 20A, allowing it to effectively drive loads.
3. Low R_DS(on): The on-resistance is typically very low (around 9.5 mΩ at V_GS = 10V), which reduces power loss and improves efficiency during operation.
4. Fast Switching Speed: Its design allows for quick switching, beneficial for high-frequency applications.
5. Package Type: It comes in a compact SO-8 package, facilitating easier integration into circuit designs and saving board space.
6. Thermal Performance: The MOSFET features good thermal characteristics, supporting reliable operation under various thermal conditions.
These attributes make the SI2319DS-T1-E3 well-suited for applications in power management, switching, and load driving circuits.

Package

The SI2319DS-T1-E3 is packaged in a SOT-23 format, which is a small, surface-mount package commonly used for transistors.

Pinout

The SI2319DS-T1-E3 is an N-channel MOSFET with a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the MOSFET’s on/off state.
2. Drain (D) - Connects to the load; current flows out of this pin when the device is on.
3. Source (S) - Connects to ground or the negative side of the load; current flows into this pin when the device is on.
4. Body diode - Internal body diode allows current flow in the reverse direction when the MOSFET is off.
The part is commonly used in power management applications, providing efficient switching with low on-resistance and fast switching speeds. It is suitable for use in various electronic devices, including power supplies and motor drives.

Manufacturer

The SI2319DS-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the production of discrete semiconductors and passive electronic components. Founded in 1962, the company specializes in various technologies, including diodes, transistors, capacitors, and resistors. Vishay serves a wide range of industries, such as automotive, industrial, computing, consumer electronics, and telecommunications. The company is known for its commitment to innovation, quality, and reliability in electronic components, making it a key player in the electronics manufacturing sector.

Application

The SI2319DS-T1-E3 is a N-channel MOSFET typically used in applications such as power management, battery management systems, motor control, load switching, and DC-DC converters. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power applications and space-constrained designs in consumer electronics, automotive, and industrial systems.

Equivalent

The SI2319DS-T1-E3 is a N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and IRLML2502. Always check specific datasheet parameters (like V_DS, I_D, R_DS(on)) for compatibility in your application.

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