SI2318DS-T1-E3

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SI2318DS-T1-E3

MOSFET N-CH 40V 3A SOT23-3

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Especificaciones

Series TrenchFET®
Part Status Obsolete
Base Product Number SI2318
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 20 V
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package TO-236-3, SC-59, SOT-23-3
Packaging Cut Tape (CT), Tape & Reel (TR)

Descripción general

Description

The SI2318DS-T1-E3 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a low on-resistance (RDS(on)), which allows for reduced power loss and improved thermal performance in electronic circuits. The device is typically used in power management, motor control, and DC-DC converter applications.
Key specifications include a maximum drain-source voltage (VDS) of 30V, continuous drain current (ID) of 5.5A at 25°C, and a maximum gate-source voltage (VGS) of ±20V. The compact package design enhances its suitability for space-constrained applications.
The SI2318DS-T1-E3 is optimized for low-voltage applications, making it a popular choice among engineers seeking reliable performance and efficiency. Its robust construction and thermal characteristics ensure longevity and stability in various operating environments.

Features

The SI2318DS-T1-E3 is a N-channel MOSFET designed for various power management applications. Key features include:
1. Low On-Resistance (RDS(on)): Typically around 3.2 mΩ at VGS = 10V, which minimizes power loss during operation.
2. High Current Handling: Can handle continuous drain currents up to 62A, making it suitable for high-power applications.
3. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, allowing it to operate efficiently in low-voltage circuits.
4. Fast Switching Speed: Offers rapid switching capabilities, which enhance efficiency in power conversion applications.
5. Compact Package: Available in a DPAK package, facilitating easy integration into circuit boards.
6. Thermal Performance: Features good thermal stability with a low thermal resistance, ensuring reliable operation under high temperatures.
These characteristics make the SI2318DS-T1-E3 ideal for use in DC-DC converters, motor drivers, and other power switching applications.

Package

The SI2318DS-T1-E3 is packaged in a SO-8 (Small Outline 8) surface-mount package. This type is compact, allowing for efficient space utilization on printed circuit boards.

Pinout

The SI2318DS-T1-E3 is an N-channel MOSFET with a pin count of 6. The pin functions are as follows:
1. Gate (G) - Controls the MOSFET's switching operation.
2. Drain (D) - The terminal where the output current flows out.
3. Source (S) - The terminal from which the current enters the MOSFET.
4. Drain (D) - Second drain pin, typically connected to the same drain point for thermal distribution and current handling.
5. Source (S) - Second source pin, typically connected to the same source point for improved performance.
6. GND (Ground) - Common reference point for the circuit.
The SI2318DS-T1-E3 is commonly used in applications such as power management and load switching due to its low on-resistance and efficient performance.

Manufacturer

The SI2318DS-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the development and production of discrete semiconductors and passive electronic components. Founded in 1962, the company specializes in a wide range of electronic products, including diodes, transistors, capacitors, resistors, and inductors, which are used across various industries such as automotive, industrial, telecommunications, and consumer electronics. Vishay is known for its commitment to innovation and quality, providing solutions that help enhance performance and efficiency in electronic applications.

Application

The SI2318DS-T1-E3 is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, load switches, and battery management systems. It is suitable for use in portable devices, power supplies, and various consumer electronics due to its low on-resistance and fast switching capabilities, making it efficient for energy-saving applications.

Equivalent

Equivalent products to the SI2318DS-T1-E3 MOSFET include the BSS138, IRLML2502, and 2N7000. These alternatives may have similar characteristics, but it's crucial to verify their specific ratings (voltage, current, and RDS(on)) to ensure compatibility with your application. Always consult datasheets for detailed specifications.

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