SI2315BDS-T1-E3

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SI2315BDS-T1-E3

MOSFET P-CH 12V 3A SOT23-3

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  • Mfr. Parte #SI2315BDS-T1-E3
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Especificaciones

Supplier Vishay Siliconix
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 12 V
Current-ContinuousDrain(Id)@25°C 3A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 1.8V, 4.5V
RdsOn(Max)@IdVgs 50mOhm @ 3.85A, 4.5V
Vgs(th)(Max)@Id 900mV @ 250µA
GateCharge(Qg)(Max)@Vgs 15 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 715 pF @ 6 V
PowerDissipation(Max) 750mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Descripción general

Description

The SI2315BDS-T1-E3 is a Vishay Siliconix N‑channel enhancement MOSFET. It’s a compact, surface‑mount power switch designed for low‑voltage switching in portable and compact electronics.
Key points:
- Type: N‑channel MOSFET (enhancement mode)
- Typical use: switching/regulating loads in power-management circuits (DC‑DC converters, load switches, battery management)
- Packaging: small SMD package suitable for dense layouts (RoHS/Pb‑free)
- Gate drive: logic‑level capable, enabling operation from 3.3V/5V logic rails
- Electricals (datasheet needed for exact figures): Vds rating in the ~20–30V range; low Rds(on) to minimize conduction losses; gate threshold in the low V range
- Advantages: small footprint, good efficiency, suitable for compact designs
Note: Exact parameters (Vds, Id, Rds(on), package details) vary by lot and variant. Refer to the official datasheet for precise electrical specs, thermal limits, and recommended PCB/layout guidelines.

Features

SI2315BDS-T1-E3 is a small N-channel enhancement-mode MOSFET. Key features (highlights):
- N-channel MOSFET, logic-level gate
- VDS ~ 20 V (max)
- ID handling of several amps (typical ≈ 5 A range)
- Very low RDS(on) at VGS = 4.5 V (typical tens of milliohms)
- Low gate drive required; VGS(th) ≈ 0.7–1.5 V
- Fast switching with low gate charge
- RoHS-compliant Pb-free package in 3-pin SOT-23 (T1) form factor
- Suitable for power switching, DC-DC converters, load switching
Note: exact electrical values (VDS, ID, RDS(on), Qg) vary by lot; consult the datasheet for precise numbers.

Package

DPAK (TO-252) surface-mount package.

Pinout

- Pin count: 3
- Function: N-channel enhancement-mode MOSFET used as a switch (SOT-23 package). Pinout: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source.

Manufacturer

Manufacturer: Vishay Intertechnology, Inc. (Vishay Siliconix).
What kind of company: A global semiconductor company that designs and manufactures discrete semiconductors (e.g., MOSFETs, diodes) and passive components (resistors, capacitors, inductors), serving numerous electronics markets worldwide.

Application

SI2315BDS-T1-E3 is a generic N-channel enhancement MOSFET. Common applications include:
- DC-DC converter switching element (buck/boost)
- Load switch / power-path control
- Motor/actuator driver and PWM switch
- Battery management and protection circuits (reverse polarity, protection)
- General-purpose power switching in automotive, industrial, and consumer electronics.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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