SI2312CDS-T1-GE3

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SI2312CDS-T1-GE3

MOSFET N-CH 20V 6A SOT23-3

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 1.8V, 4.5V
RdsOn(Max)@IdVgs 31.8mOhm @ 5A, 4.5V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 18 nC @ 5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 865 pF @ 10 V
PowerDissipation(Max) 1.25W (Ta), 2.1W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Descripción general

Description

The SI2312CDS-T1-GE3 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. It features low on-resistance, making it efficient for power management and switching applications. This MOSFET can handle a maximum drain current of around 10 A and typically operates with a maximum drain-source voltage of 30 V.
The device is packaged in a compact surface-mount configuration (SOT-23), which makes it suitable for space-constrained applications in consumer electronics, power supplies, and automotive systems. Its fast switching capabilities and thermal performance enhance its utility in high-frequency circuits.
In summary, the SI2312CDS-T1-GE3 is a versatile MOSFET that offers reliability and efficiency for modern electronic design needs.

Features

The SI2312CDS-T1-GE3 is an N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for low-voltage applications.
2. Current Capability: The device supports a continuous drain current (ID) of up to 6.5A, allowing it to handle significant loads.
3. Low RDS(on): With a low on-resistance (RDS(on)) of around 10 mΩ at a gate voltage (VGS) of 10V, it minimizes power losses and heat generation during operation.
4. Fast Switching: It offers high-speed switching capabilities, which are essential for efficient operation in PWM (Pulse Width Modulation) applications.
5. Package Type: Available in a compact SO-8 package, which aids in space-constrained designs.
6. Applications: Commonly used in DC-DC converters, power management systems, and motor control circuits.
These features make the SI2312CDS-T1-GE3 a popular choice for engineers seeking reliable and efficient MOSFET solutions.

Package

The SI2312CDS-T1-GE3 is packaged in a SOT-23 surface-mount package. This compact package type is commonly used for low-power MOSFETs, providing efficient thermal performance and space-saving benefits for circuit designs.

Pinout

The SI2312CDS-T1-GE3 is an N-channel MOSFET with a pin count of 6. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to the ground or negative side of the circuit.
4. D (second Drain) - Another drain terminal for enhanced current handling.
5. S (second Source) - Another source terminal for better thermal performance.
6. N/C (No Connection) - A pin that is not connected internally and can be left floating.
The device is optimized for low on-resistance and fast switching, making it suitable for power management applications, including DC-DC converters and load switching.

Manufacturer

The SI2312CDS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is known for its wide range of products, including diodes, transistors, resistors, capacitors, and inductors, serving various industries such as automotive, consumer electronics, industrial, and telecommunications. Vishay is recognized for its innovative technologies and high-quality components, enhancing the performance and reliability of electronic systems.

Application

The SI2312CDS-T1-GE3 is an N-channel MOSFET commonly used in applications such as power management, load switching, and DC-DC converters. Its low on-resistance and high-speed switching capabilities make it suitable for battery-powered devices, motor control, and power supply circuits in consumer electronics, automotive, and industrial applications.

Equivalent

The SI2312CDS-T1-GE3 is an N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and IRF3708. Always check datasheets for specific electrical characteristics and footprint compatibility before substitution.

Envío

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