SI2309CDS-T1-E3

Las imágenes son solo para referencia

SI2309CDS-T1-E3

MOSFET P-CH 60V 1.6A SOT23-3

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 1.6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 345mOhm @ 1.25A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 4.1 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 210 pF @ 30 V
PowerDissipation(Max) 1W (Ta), 1.7W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Descripción general

Description

The SI2309CDS-T1-E3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage applications. It features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of 9.2A, making it suitable for a variety of power management tasks. The device is housed in a compact SOT-23 package, allowing for space-saving designs in printed circuit boards (PCBs).
Key specifications include a low gate threshold voltage (V_GS(th)), which enables efficient switching at lower gate voltages, and a low on-resistance (R_DS(on)), minimizing conduction losses and improving overall efficiency. It is commonly used in applications such as power supplies, DC-DC converters, and motor control systems.
Overall, the SI2309CDS-T1-E3 is valued for its performance, efficiency, and versatility in modern electronic designs.

Features

The SI2309CDS-T1-E3 is an N-channel MOSFET designed for various applications including power management and switching. Key features include:
1. Voltage Rating: It typically supports drain-source voltage (Vds) up to 30V.
2. Current Handling: Capable of handling continuous drain current (Id) up to 9.5A.
3. Low Rds(on): Offers a low on-resistance (Rds(on)) of approximately 35 mΩ at Vgs = 10V, which enhances efficiency by reducing power loss.
4. Fast Switching: Designed for high-speed switching applications, making it suitable for both conventional and high-frequency circuits.
5. Thermal Performance: It has a thermal resistance specification that allows for effective heat dissipation.
6. Package Type: Available in a compact surface-mount package (SOT-23), enabling space-saving designs.
7. RoHS Compliant: Meets environmental standards for reduced hazardous substances.
These features make the SI2309CDS-T1-E3 suitable for applications in switching power supplies, DC-DC converters, and motor control systems.

Package

The SI2309CDS-T1-E3 is packaged in a SOT-23 surface-mount package.

Pinout

The SI2309CDS-T1-E3 is an N-channel MOSFET in a SOT-23 package, which typically has 5 pins.
### Pin Count:
- Total Pins: 5
### Pin Function:
1. Gate (G): Controls the switching of the MOSFET; applies voltage to turn the device on/off.
2. Drain (D): Connects to the load; current flows from the drain to the source when the MOSFET is on.
3. Source (S): Connects to ground or the lower potential; current flows from the source to the drain when on.
4. N/C (Not Connected): Typically not used.
5. N/C (Not Connected): Typically not used.
This MOSFET is designed for low voltage, high-speed switching applications, making it suitable for power management in various electronic devices.

Manufacturer

The SI2309CDS-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a multinational company that specializes in the design and manufacturing of a wide range of electronic components. Their product offerings include resistors, capacitors, inductors, diodes, transistors, and integrated circuits. Vishay serves various industries such as automotive, industrial, military, aerospace, and consumer electronics, providing components that are essential for circuit design and implementation. The company is known for its commitment to quality and innovation in the electronics sector.

Application

The SI2309CDS-T1-E3 is a N-channel MOSFET commonly used in applications such as power management, load switching, and battery management in consumer electronics. It is suitable for use in DC-DC converters, motor control, and power distribution circuits due to its low on-resistance and fast switching capabilities. Additionally, it is often found in portable devices, industrial equipment, and automotive applications.

Equivalent

The SI2309CDS-T1-E3 is an N-channel MOSFET. Equivalent products include the BSS123, IRF520, and AO3400. Always verify specifications like VDS, ID, RDS(ON), and package type to ensure compatibility for your specific application.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

Similar