SI2302CDS-T1-E3

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SI2302CDS-T1-E3

MOSFET N-CH 20V 2.6A SOT23-3

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 2.6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 4.5V
RdsOn(Max)@IdVgs 57mOhm @ 3.6A, 4.5V
Vgs(th)(Max)@Id 850mV @ 250µA
GateCharge(Qg)(Max)@Vgs 5.5 nC @ 4.5 V
Vgs(Max) ±8V
PowerDissipation(Max) 710mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Descripción general

Description

The SI2302CDS-T1-E3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. It features a low on-resistance (R_DS(on)) value, which minimizes power loss and heat generation during operation, making it suitable for high-efficiency switching applications.
This MOSFET can handle a maximum drain-source voltage of 20V and a continuous drain current of around 3.5A, depending on the conditions. It's typically used in power management circuits, DC-DC converters, and other electronic applications where efficient switching is essential.
The device is housed in a compact SOT-23 package, ensuring minimal space usage on PCBs (Printed Circuit Boards). Its fast switching speed and reliability make it a popular choice in consumer electronics, automotive, and industrial applications.
Overall, the SI2302CDS-T1-E3 is a versatile component that enhances the performance of power circuits while maintaining a small form factor.

Features

The SI2302CDS-T1-E3 is a N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Low R_DS(on): It offers low on-resistance, which minimizes power loss during operation, enhancing efficiency.
2. High Voltage Rating: The device typically supports a drain-source voltage (V_DS) up to 30V, making it suitable for a range of power applications.
3. Compact Package: Packaged in a small SOT-23 format, it allows for space-saving designs in circuit layouts.
4. Fast Switching Speed: Optimized for fast switching, it helps improve performance in high-speed applications.
5. Low Gate Charge (Q_g): Reduces the energy required for driving the gate, which is beneficial for battery-operated devices.
6. Thermal Stability: Designed to handle thermal stress, ensuring reliable operation in various environments.
These features make the SI2302CDS-T1-E3 suitable for applications such as DC-DC converters, motor drivers, and other power management solutions.

Package

The SI2302CDS-T1-E3 is packaged in a small SOT-23 type package. This surface-mount package is designed for space-constrained applications, providing efficient thermal performance and ease of handling in automated assembly processes.

Pinout

The SI2302CDS-T1-E3 is a dual N-channel MOSFET in a SOT-23 package. It has a total of 6 pins. The pin configuration is as follows:
1. Gate 1 (G1): Gate of the first N-channel MOSFET.
2. Drain 1 (D1): Drain of the first N-channel MOSFET.
3. Source 1 (S1): Source of the first N-channel MOSFET.
4. Gate 2 (G2): Gate of the second N-channel MOSFET.
5. Drain 2 (D2): Drain of the second N-channel MOSFET.
6. Source 2 (S2): Source of the second N-channel MOSFET.
The device is designed for low on-resistance and fast switching applications, making it suitable for power management and load switching in various electronic circuits.

Manufacturer

The SI2302CDS-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the discrete semiconductors and passive components industry. The company specializes in the design, manufacturing, and supply of a wide range of electronic components, which are used in various applications, including automotive, industrial, telecommunications, and consumer electronics. Vishay's product portfolio includes MOSFETs, diodes, resistors, capacitors, inductors, and other electronic components, emphasizing innovation and reliability in their offerings. Established in 1962, Vishay has a strong presence in the electronics market, known for quality and performance in its products.

Application

The SI2302CDS-T1-E3 is a N-channel MOSFET commonly used in applications such as power management, battery protection, load switching, and DC-DC converters. Its low on-resistance and fast switching speed make it suitable for portable electronics, automotive systems, and industrial automation. Additionally, it can be utilized in LED drivers and power distribution circuits.

Equivalent

The SI2302CDS-T1-E3 is a N-channel MOSFET. Equivalent products include the BSS138, BSS123, and 2N7000, depending on specific requirements like voltage ratings and current handling. For a direct equivalent, consider the SI2302DS or similar N-channel MOSFETs with comparable specifications. Always verify parameters such as VDS, ID, and RDS(on) to ensure compatibility.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

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3. Transferencia bancaria

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