SI2301BDS-T1-E3

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SI2301BDS-T1-E3

MOSFET P-CH 20V 2.2A SOT23-3

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 2.2A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 4.5V
RdsOn(Max)@IdVgs 100mOhm @ 2.8A, 4.5V
Vgs(th)(Max)@Id 950mV @ 250µA
GateCharge(Qg)(Max)@Vgs 10 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 375 pF @ 6 V
PowerDissipation(Max) 700mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Descripción general

Description

SI2301BDS-T1-E3 is a part number for a specific N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is designed for low-voltage applications, providing efficient switching capabilities. The device typically features low on-resistance, which enhances power efficiency and reduces heat dissipation during operation.
Key specifications often include a maximum drain-source voltage and a rated continuous drain current, making it suitable for various electronic applications, such as power management, motor control, and switching regulators. The "T1" designator usually indicates a packaging style, often suggesting a surface-mount configuration, while "E3" denotes specific environmental and lead finish characteristics.
Overall, the SI2301BDS-T1-E3 is widely used in consumer electronics, automotive systems, and industrial applications due to its reliable performance and compact design. For detailed specifications and application notes, referring to the manufacturer's datasheet is recommended.

Features

The SI2301BDS-T1-E3 is an N-channel MOSFET designed for low voltage and high-speed switching applications. Its key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Continuous drain current (I_D) of up to 6.5A.
3. On-Resistance: Low on-resistance (R_DS(on)) of around 0.045Ω at V_GS = 10V, ensuring efficient operation and reduced power loss.
4. Gate Threshold Voltage: V_GS(th) of 1-3V, allowing for easy drive from low voltage logic levels.
5. Package Type: Available in a compact SOT-23 package, making it suitable for space-constrained applications.
6. Thermal Characteristics: Good thermal performance with a maximum junction temperature of 150°C.
7. Applications: Commonly used in power management, DC-DC converters, and other electronic switching circuits.
Overall, the SI2301BDS-T1-E3 is ideal for applications requiring efficient power handling and compact design.

Package

The SI2301BDS-T1-E3 is packaged in a small SOT-23 (SOT-23-3) form factor. This surface-mount package type is designed for space efficiency and ease of integration in electronic circuits.

Pinout

The SI2301BDS-T1-E3 is a N-channel MOSFET with a total of 8 pins. The pin configuration and functions are as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The output terminal where the current flows out when the device is on.
3. Source (S): The terminal through which current enters the MOSFET.
The specific pin assignments for the SI2301BDS-T1-E3 are typically as follows (when viewed from the top):
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
- Pin 4: Source
- Pin 5: Drain
- Pin 6: Gate
- Pin 7: Drain
- Pin 8: Source
This MOSFET is widely used in applications such as power management and switching due to its low on-resistance and high-speed performance.

Manufacturer

The SI2301BDS-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the discrete semiconductors and passive components markets. The company was founded in 1962 and is known for its extensive portfolio of products, including integrated circuits, resistors, capacitors, inductors, and diodes. Vishay serves a wide range of industries, including automotive, industrial, consumer electronics, telecommunications, and military/aerospace. The SI2301BDS-T1-E3 is a N-channel MOSFET, commonly used in power management applications due to its efficient switching capabilities and low on-resistance.

Application

The SI2301BDS-T1-E3 is an N-channel MOSFET primarily used in power management applications, such as DC-DC converters, motor control, and load switches. Its features make it suitable for low-voltage, high-efficiency designs in consumer electronics, battery-powered devices, and portable applications. Additionally, it is utilized in switching regulators and as an electronic switch in various electronic circuits.

Equivalent

The SI2301BDS-T1-E3 is a N-channel MOSFET. Equivalent products include the BSS138, BS170, and 2N7000. For more specific applications, consider the IRLML2502 or the AO3400. Always verify specifications like voltage, current ratings, and RDS(on) to ensure compatibility for your particular application.

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