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SGT60N60FD1PN
- Fabricante
- Mfr. Parte #SGT60N60FD1PN
- Paquete
- Hoja de datos SGT60N60FD1PN DataSheet
- En stock24206
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Especificaciones
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-3P-3 |
Descripción general
Description
The device is optimized for fast switching speeds, making it ideal for high-frequency applications. It typically features a gate threshold voltage range that enhances its compatibility with various drive circuits. The SGT60N60FD1PN is housed in a TO-247 package, providing effective thermal performance and ease of mounting.
Overall, this MOSFET is well-suited for applications where high voltage, efficiency, and reliability are crucial. Its robust design allows it to handle demanding conditions while maintaining high performance.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 60A, providing robust performance in power circuits.
3. R_DS(on): The on-resistance is typically low (around 0.25 ohms), ensuring efficient operation and minimizing power loss during conduction.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for compatibility with various gate drive circuits.
5. Fast Switching: Designed for high-speed switching, which enhances efficiency in applications like switch-mode power supplies and inverters.
6. Thermal Performance: Capable of dissipating heat effectively with a thermal resistance (RθJC) suitable for high-power applications.
Overall, the SGT60N60FD1PN is a versatile MOSFET ideal for industrial, automotive, and consumer electronics applications.
Package
Pinout
1. Gate (G): The gate terminal is used to control the MOSFET's on/off state. A voltage applied to the gate turns the device on, allowing current to flow from the drain to the source.
2. Drain (D): The drain terminal is where the current enters when the MOSFET is in the on state. It is connected to the load in the circuit.
3. Source (S): The source terminal is where the current exits when the MOSFET is switched on. It is typically connected to ground or the negative side of the power supply in a low-side configuration.
The SGT60N60FD1PN is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 60A, making it suitable for power electronics and switching applications.
Manufacturer
Application
Equivalent
1. STP60NF06
2. IRFPG60
3. FQD60N60
4. MTP60N60
5. AUIRFPG60
Always verify specifications such as RDS(on), gate threshold voltage, and package type for compatibility.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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