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SCTW100N65G2AG
SICFET N-CH 650V 100A HIP247
- Fabricante
- Mfr. Parte #SCTW100N65G2AG
- Paquete
- Hoja de datos SCTW100N65G2AG DataSheet
- En stock13846
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Especificaciones
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 18V |
| RdsOn(Max)@IdVgs | 26mOhm @ 50A, 18V |
| Vgs(th)(Max)@Id | 5V @ 5mA |
| GateCharge(Qg)(Max)@Vgs | 162 nC @ 18 V |
| Vgs(Max) | +22V, -10V |
| InputCapacitance(Ciss)(Max)@Vds | 3315 pF @ 520 V |
| PowerDissipation(Max) | 420W (Tc) |
| OperatingTemperature | -55°C ~ 200°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | HiP247™ |
Descripción general
Description
This MOSFET is part of the second generation of superjunction technology, which provides lower on-resistance (RDS(on)) and reduced switching losses compared to older designs. Its efficient thermal performance allows for enhanced reliability and efficiency in high-voltage applications.
Applications include power supplies, renewable energy systems, and electric vehicle (EV) inverters, where high efficiency and fast switching capabilities are critical. The SCTW100N65G2AG also offers fast recovery times and robust gate drive characteristics, contributing to overall system efficiency and performance.
As with any power semiconductor, proper thermal management and circuit design considerations are essential for optimal operation.
Features
1. Voltage Rating: 650V, suitable for high-voltage applications.
2. Current Rating: 100A, allowing for substantial power handling capabilities.
3. Low RDS(on): Offers a low on-resistance for enhanced efficiency and reduced heat generation.
4. Fast Switching: Enables high-frequency operation, improving overall system efficiency and reducing switching losses.
5. Thermal Performance: High thermal conductivity ensures better heat dissipation, critical for demanding applications.
6. Robustness: Designed to withstand harsh conditions, making it ideal for automotive, industrial, and renewable energy applications.
7. High-Temperature Operation: Capable of operating at elevated temperatures, which is beneficial in various applications.
These features make the SCTW100N65G2AG suitable for applications like solar inverters, motor drives, and power converters.
Package
Pinout
1. Gate (G) - Controls the MOSFET's switching operation.
2. Drain (D) - The terminal through which the load current flows when the device is on.
3. Source (S) - The terminal connected to the ground or the negative side of the supply.
The specific pin arrangement may vary slightly depending on the package type, so it's essential to refer to the manufacturer's datasheet for accurate details. This MOSFET is commonly used in applications like power supplies, inverters, and electric vehicle systems due to its high efficiency and thermal performance.
Manufacturer
Application
Equivalent
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UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
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Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
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