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SCT2H12NZGC11
SICFET N-CH 1700V 3.7A TO3PFM
- Fabricante
- Mfr. Parte #SCT2H12NZGC11
- Paquete TO-3
- Hoja de datos SCT2H12NZGC11 DataSheet
- En stock6973
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Especificaciones
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 1700 V |
| Current-ContinuousDrain(Id)@25°C | 3.7A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 18V |
| RdsOn(Max)@IdVgs | 1.5Ohm @ 1.1A, 18V |
| Vgs(th)(Max)@Id | 4V @ 900µA |
| GateCharge(Qg)(Max)@Vgs | 14 nC @ 18 V |
| Vgs(Max) | +22V, -6V |
| InputCapacitance(Ciss)(Max)@Vds | 184 pF @ 800 V |
| PowerDissipation(Max) | 35W (Tc) |
| OperatingTemperature | 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-3PFM |
Descripción general
Description
Its SiC technology offers advantages over traditional silicon devices, including improved thermal performance and reduced size for power management systems. The SCT2H12NZGC11 is particularly beneficial for applications in renewable energy systems, electric vehicles, and industrial machinery, where efficient energy conversion is critical. Overall, this MOSFET represents a robust solution for modern power electronics, enabling designers to achieve higher efficiency and reliability in their applications.
Features
1. Voltage Rating: 1200V, suitable for high-voltage applications.
2. Current Rating: Capable of handling up to 50A, providing robust performance under load.
3. Low On-Resistance: Offers low R_DS(on), resulting in reduced conduction losses and improved thermal performance.
4. High Switching Speed: Facilitates fast switching operations, enhancing overall efficiency in power conversion.
5. Thermal Performance: Excellent thermal conductivity, allowing for effective heat dissipation.
6. Gate Threshold Voltage: Compatible with standard gate drive levels, simplifying circuit design.
7. Robustness: Offers superior reliability and durability in demanding environments.
These features make the SCT2H12NZGC11 ideal for applications in renewable energy, electric vehicles, and industrial power supplies, where efficiency and performance are critical.
Package
Pinout
Typically, the pin configuration includes:
1. Gate (G) - for controlling the MOSFET.
2. Drain (D) - the output terminal where the load is connected.
3. Source (S) - the terminal connected to the ground or negative supply.
4. Body (B) - an internal diode that can be used in switching applications.
The specific pin arrangement may vary slightly depending on the manufacturer’s packaging, so it’s advisable to consult the datasheet for detailed pin mapping and electrical characteristics.
This device is utilized in applications such as power converters, inverters, and motor drives, providing benefits like reduced switching losses and enhanced thermal performance.
Manufacturer
Application
Equivalent
1. SCT2H12NZGC10
2. SCT2H12NZGC12
3. IPB180N15N3 G
4. FDPF180N15
5. IRF180
6. STP16NF06
Always verify specifications like voltage, current ratings, and package type before substitution.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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