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SCT2330TVBR
- Fabricante
- Mfr. Parte #SCT2330TVBR
- Paquete
- Hoja de datos SCT2330TVBR DataSheet
- En stock5450
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Especificaciones
| Manufacturer | SCT |
| Package | TSOT-23-6L |
| Voltage - Supply | 3.8V~32V |
| Function | Step-down type |
| Synchronous Rectifier | Yes |
| Number of Outputs | 1 |
| Topology | Step-Down |
| Operating Temperature | -40℃~+125℃ |
| Quiescent Current | 20uA |
| Switch tube (built-in/external) | Built-in |
| Output Current | 3A |
| Frequency - Switching | 360kHz~440kHz |
Descripción general
Description
The SCT2330TVBR operates efficiently, providing precise voltage regulation and high power conversion efficiency, making it suitable for a variety of electronic devices, including consumer electronics, industrial equipment, and automotive applications. It is designed to operate over a wide input voltage range and can support multiple output configurations, offering flexibility in design.
In summary, the SCT2330TVBR is an essential component for engineers looking to design reliable and efficient power management solutions in their electronic systems.
Features
1. Low RDS(on): Offers low on-resistance, ensuring efficient power delivery and minimal heat generation.
2. High Current Rating: Capable of handling significant current levels, making it suitable for demanding applications.
3. Wide Gate Voltage Range: Allows operation with a range of gate voltages for flexible control.
4. Fast Switching Speed: Enables quick turn-on and turn-off times, beneficial for high-frequency applications.
5. Thermal Stability: Designed to operate reliably under varying thermal conditions.
6. Compact Package: Typically available in a small footprint, optimizing space in circuit designs.
These features make the SCT2330TVBR ideal for use in DC-DC converters, motor drives, and other power management systems.
Package
Pinout
The pin configuration is as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Connected to the load for the first MOSFET.
3. Source 1 (S1) - Ground or low-side connection for the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - Connected to the load for the second MOSFET.
6. Source 2 (S2) - Ground or low-side connection for the second MOSFET.
This device is suitable for applications requiring efficient switching performance, and it typically features a low R_DS(on) for reduced conduction losses.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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