SCT070W120G3-4AG

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SCT070W120G3-4AG

TO247-4

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Especificaciones

Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 87mOhm @ 15A, 18V
Vgs(th) (Max) @ Id 4.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 18 V
Vgs (Max) +18V, -5V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 850 V
Power Dissipation (Max) 236W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4

Descripción general

Description

The SCT070W120G3-4AG is a high-performance silicon carbide (SiC) MOSFET designed for use in power electronics applications. It features a voltage rating of 1200V and a current rating of 70A, making it suitable for high-efficiency power conversion systems, including industrial drives, renewable energy applications, and electric vehicles.
This device offers low on-resistance and fast switching capabilities, which help in reducing energy losses and improving overall system efficiency. Its robust thermal performance allows for better heat management, enhancing reliability in demanding environments.
The SCT070W120G3-4AG also incorporates advanced gate drive technology, which simplifies the design process and improves switching speed. It is packaged in a TO-247 format, ensuring easy integration into existing designs.
Overall, this MOSFET is a reliable choice for engineers looking to develop efficient, high-performance power solutions.

Features

The SCT070W120G3-4AG is a high-performance Silicon Carbide (SiC) MOSFET designed for power applications. Key features include:
1. Voltage Rating: Rated for 1200V, suitable for high-voltage applications.
2. Current Rating: Capable of handling high continuous current, enhancing efficiency in power conversion.
3. Low On-Resistance: Offers low R_DS(on), reducing conduction losses and improving overall efficiency.
4. High Switching Speed: Enables faster switching, which can lead to smaller passive components in power circuits.
5. Thermal Performance: Excellent thermal stability and high-temperature operation, allowing for more rugged designs.
6. Gate Drive Compatibility: Designed for ease of integration with standard gate drivers, simplifying circuit design.
7. Robustness: Built to withstand harsh environments, making it suitable for industrial, automotive, and renewable energy applications.
This MOSFET is particularly advantageous in applications such as inverters, converters, and other high-frequency power systems.

Package

The SCT070W120G3-4AG is packaged in a TO-247 format, which is a type of power semiconductor package designed for high-voltage applications, offering efficient thermal performance and easy mounting on heatsinks.

Pinout

The SCT070W120G3-4AG is a silicon carbide (SiC) MOSFET with a total of 5 pins. Its primary functions include:
1. Gate (G): This pin is used to control the MOSFET's switching operation. It receives a voltage signal to turn the device on or off.
2. Drain (D): The drain pin connects to the load and is where the current flows from the device when it is in the on state.
3. Source (S): This pin is connected to the ground or the negative side of the circuit, allowing current to exit the device.
The specific pin configuration may vary, so it is advisable to refer to the manufacturer's datasheet for detailed electrical characteristics, maximum ratings, and application guidelines.

Manufacturer

The SCT070W120G3-4AG is manufactured by SCT (Silicon Carbide Technology). SCT is known for producing advanced semiconductor devices, particularly focusing on silicon carbide (SiC) technology. This company specializes in high-performance power devices used in various applications, including renewable energy systems, electric vehicles, and industrial power management. Their products are designed to enhance efficiency and reliability in power conversion systems. As a company, SCT operates in the semiconductor industry, providing innovative solutions that contribute to advancements in energy efficiency and sustainability.

Application

The SCT070W120G3-4AG is a silicon carbide (SiC) MOSFET primarily used in high-efficiency power applications. Its application areas include electric vehicles, renewable energy systems (like solar inverters), industrial motor drives, and power supplies for data centers. Its ability to operate at high temperatures and voltages makes it suitable for high-performance switching applications, enhancing energy savings and system reliability.

Equivalent

The SCT070W120G3-4AG is a silicon carbide (SiC) MOSFET. Equivalent products include the C2M0080120D, C3M0075120K, and STMicroelectronics' SCTW120N120. When looking for alternatives, consider their voltage ratings, on-resistance, and package type to ensure compatibility. Always verify specifications and application requirements before replacing components.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

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3. Transferencia bancaria

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