S34MS02G100BHI000

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S34MS02G100BHI000

IC FLASH 2GBIT PARALLEL 63BGA

  • Fabricante
  • Mfr. Parte #S34MS02G100BHI000
  • Paquete BGA-63
  • Hoja de datos
  • En stock5348

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Especificaciones

Package Tray,Tray
Series MS-1
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND
MemorySize 2Gb (256M x 8)
MemoryInterface Parallel
WriteCycleTime-WordPage 45ns
AccessTime 45 ns
Voltage-Supply 1.7V ~ 1.95V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 63-VFBGA

Descripción general

Description

The S34MS02G100BHI000 is a non-volatile memory component, specifically a NAND flash memory device. It typically features a 2Gbit (256MB) capacity, utilizing a SLC (Single Level Cell) architecture for enhanced performance and endurance, making it suitable for applications requiring high reliability. The "BHI" in the part number usually indicates the package type and temperature grade, which can be important for understanding its environmental tolerance and use cases.
This memory device is commonly used in various applications such as consumer electronics, automotive systems, and industrial equipment, where fast data access and storage reliability are critical. It is compatible with standard interfaces, allowing easy integration into different systems. The S34MS02G100BHI000 is part of a broader family of memory solutions, emphasizing scalability and versatility in design.

Features

The S34MS02G100BHI000 is a high-performance NAND flash memory chip designed primarily for embedded systems and consumer electronics. Here are its key features:
1. Capacity: 2 Gbit (256 MB) storage capacity, suitable for various applications.
2. Interface: Serial Peripheral Interface (SPI) for easy integration with microcontrollers and processors.
3. Speed: Offers fast read and write speeds, optimizing data transfer rates.
4. Endurance: Designed for high endurance with a significant number of program/erase cycles, enhancing the lifespan of the device.
5. Low Power Consumption: Operates efficiently, making it suitable for battery-powered applications.
6. Temperature Range: Supports a wide operating temperature range, ensuring reliability in diverse environments.
7. Data Protection: Features error-correction codes (ECC) and wear leveling for data integrity and longevity.
8. Form Factor: Available in small footprint packages for space-constrained designs.
This combination of features makes the S34MS02G100BHI000 ideal for use in IoT devices, automotive applications, and consumer electronics.

Package

The S34MS02G100BHI000 is packaged in a 48-ball FBGA (Fine-Pitch Ball Grid Array) format. This type of packaging is designed for high-density applications, providing efficient thermal management and electrical performance.

Pinout

The S34MS02G100BHI000 is a 2 Gb (256 MB) NAND Flash memory device from Cypress (now part of Infineon). It typically comes in a 48-ball BGA (Ball Grid Array) package, which has a pin count of 48 balls.
### Key Functions:
- Data Storage: Provides non-volatile storage for various applications, including mobile devices, consumer electronics, and industrial applications.
- Serial Interface: Supports a Serial Peripheral Interface (SPI) for data communication.
- High Performance: Offers fast read and write speeds suitable for high-demand applications.
- Endurance and Reliability: Designed for a high number of write/erase cycles, enhancing longevity.
For precise pin assignments and functions, refer to the manufacturer's datasheet, as it provides detailed information on each pin's role and electrical characteristics.

Manufacturer

The S34MS02G100BHI000 is manufactured by Micron Technology, Inc. Micron is a leading global provider of memory and storage solutions, specializing in dynamic random-access memory (DRAM), NAND flash memory, and other advanced memory technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a variety of markets, including computing, consumer electronics, automotive, and industrial applications. The company focuses on innovation and has a significant role in the semiconductor industry, offering products that enhance the performance of electronic devices.

Application

The S34MS02G100BHI000 is a NAND flash memory device typically used in various applications, including consumer electronics, mobile devices, automotive systems, and industrial automation. It is suitable for storage solutions requiring high-density data retention, such as smartphones, tablets, SSDs, and embedded systems, facilitating tasks like data logging, firmware storage, and multimedia content storage.

Equivalent

The S34MS02G100BHI000 chip, a 2Gb NAND flash memory from Cypress Semiconductor, has equivalent products from other manufacturers, such as Micron's MT29F2G01ABAEAWP, Samsung's K9GAG08U0M, and Toshiba's TC58NVG2S0HBAI4. Always verify specifications like density, package type, and interface compatibility before substitution.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria