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RHRP30120
RECTIFIER DIODE, AVALANCHE, 30A
- Fabricante
- Mfr. Parte #RHRP30120
- Paquete TO-220AC
- Hoja de datos RHRP30120 DataSheet
- En stock7111
100% original & Nuevo
24 horas listos para el envío
Garantía de 365 días
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Especificaciones
| Package | 0 |
| Series | Bulk |
| DiodeType | Active |
| Voltage-DCReverse(Vr)(Max) | Standard |
| Current-AverageRectified(Io) | 1200 V |
| Voltage-Forward(Vf)(Max)@If | 30A |
| Speed | 3.2 V @ 30 A |
| ReverseRecoveryTime(trr) | Fast Recovery =< 500ns, > 200mA (Io) |
| Current-ReverseLeakage@Vr | 85 ns |
| Capacitance@VrF | 250 µA @ 1200 V |
| Package/Case | Through Hole |
| SupplierDevicePackage | TO-220-2 |
Descripción general
Description
The goal of RHRP30120 is to equip students with the skills necessary to conduct independent research, critically evaluate existing studies, and contribute to evidence-based practice in healthcare settings. Participants may also explore current trends and challenges in health research, preparing them for careers in public health, clinical research, or academic settings. Overall, this course aims to foster a deep understanding of the intricacies involved in health research and its implications for improving health outcomes.
Features
1. Frequency Range: Operates across a wide frequency spectrum, allowing versatility in various RF applications.
2. High Sensitivity: Enhanced sensitivity for improved signal reception, crucial for reliable communication.
3. Low Power Consumption: Designed for energy efficiency, making it suitable for battery-operated devices.
4. Compact Size: Space-saving design facilitates integration into smaller applications without compromising performance.
5. Durability: Built to withstand harsh environmental conditions, ensuring longevity and reliability in diverse settings.
6. Advanced Modulation Techniques: Supports multiple modulation schemes, enhancing data transmission capabilities and flexibility.
7. User-Friendly Interface: Simplifies setup and operation, making it accessible for various users.
These features make RHRP30120 ideal for applications in telecommunications, IoT, and other RF-dependent systems.
Package
Pinout
The pin configuration typically includes:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output where the load is connected.
3. Source (S): The reference point for the voltage and where the current exits the MOSFET.
4. Body Diode (internal): Provides a path for current when the MOSFET is off, allowing for reverse current flow.
Specifications include a maximum drain-source voltage (V_DS) of 1200V, making it suitable for high-voltage applications. Its low on-resistance (R_DS(on)) enhances efficiency and reduces heat generation during operation.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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