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PSMN1R4-40YLDX
MOSFET N-CH 40V 100A LFPAK56
- Fabricante
- Mfr. Parte #PSMN1R4-40YLDX
- Paquete
- Hoja de datos
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Especificaciones
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6661 pF @ 20 V |
| Power Dissipation (Max) | 238W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Package / Case | SC-100, SOT-669 |
| Base Product Number | PSMN1R4 |
Descripción general
Description
For precise details, it's advisable to consult the product manual, datasheet, or manufacturer's website that specifically addresses PSMN1R4-40YLDX for application, features, and technical specifications. If you have a specific context in mind, please provide more information for a targeted response.
Features
Key features may include:
1. Long-Term Investment Strategy: Aiming to provide returns over a 40-year period, appealing to retirement or long-term growth investors.
2. Yield Focus: Prioritizing income generation, suitable for investors looking for regular cash flow.
3. Diversification: Typically invests across various asset classes to mitigate risk.
4. Management Style: Could be actively or passively managed, influencing its risk and return profile.
5. Risk Considerations: Investors should assess their risk tolerance, as the performance can be affected by market fluctuations over the long term.
For specific details regarding fees, historical performance, or fund composition, it’s best to consult the fund’s prospectus or financial advisor.
Package
Pinout
1. Gate (G): Controls the MOSFET's switching on and off, regulating current flow between the drain and source.
2. Drain (D): The terminal through which current flows out of the MOSFET when it is turned on.
3. Source (S): The terminal through which current flows into the MOSFET when it is conducting.
4. Body (B): Internally connected to the source, this pin can be used for substrate connection in certain applications.
This device is designed for power management applications and has a maximum drain-source voltage (V_ds) of 40V and a continuous drain current rating (I_d) that varies with the case temperature.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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