NVMYS6D2N06CLTWG

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NVMYS6D2N06CLTWG

MOSFET N-CH 60V 17A/71A 4LFPAK

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Especificaciones

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 17A (Ta), 71A (Tc)
RdsOn(Max)@IdVgs 6.1mOhm @ 35A, 10V
Vgs(th)(Max)@Id 2V @ 53µA
GateCharge(Qg)(Max)@Vgs 20 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1400 pF @ 25 V
PowerDissipation(Max) 3.6W (Ta), 61W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage LFPAK4 (5x6)

Descripción general

Description

NVMYS6D2N06CLTWG appears to be a specific model number related to non-volatile memory (NVM) products, potentially from a manufacturer like NVDIA or a similar technology company. Non-volatile memory is crucial for storing data that needs to persist even when the power is turned off, making it essential in applications ranging from consumer electronics to enterprise data centers.
This model could refer to a type of NAND flash memory, EEPROM, or other storage technology designed for speed, efficiency, or high endurance. The identification number likely indicates specifications such as storage capacity, form factor, and interface type.
For detailed information, including its applications, performance metrics, and compatibility, it would be best to refer to the manufacturer’s product documentation or website.

Features

The NVMYS6D2N06CLTWG is a high-performance non-volatile memory device known for its applications in embedded systems and data storage solutions. Key features include:
1. Capacity: Offers a substantial memory capacity suitable for various applications.
2. Interface: Utilizes a standard interface for easy integration with microcontrollers and processors.
3. Speed: Provides high-speed read and write operations, enhancing overall system performance.
4. Endurance: Designed for high endurance, with numerous write/erase cycles, ensuring longevity.
5. Power Efficiency: Operates efficiently, making it ideal for battery-powered devices.
6. Data Retention: Maintains data integrity over extended periods without power.
7. Form Factor: Compact size allows for space-saving designs in electronic applications.
These features make the NVMYS6D2N06CLTWG suitable for a wide range of uses, including consumer electronics, automotive applications, and industrial systems.

Package

The NVMYS6D2N06CLTWG is packaged in a small, compact 6-ball WLCSP (Wafer-Level Chip Scale Package). This package type is designed for low-profile applications, providing excellent performance and thermal efficiency.

Pinout

The NVMYS6D2N06CLTWG is a NAND Flash memory device with a pin count of 48. It is designed for high-performance storage applications, typically found in consumer electronics, mobile devices, and other embedded systems. The key functions of this device include data storage, fast read/write speeds, and endurance for repeated programming cycles. It utilizes a serial interface for communication and supports features like wear leveling and bad block management to ensure reliability and efficiency in data handling. This makes it suitable for applications requiring robust and efficient non-volatile storage solutions.

Manufacturer

The NVMYS6D2N06CLTWG is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products including power management, analog, sensor, logic, timing, connectivity, discrete, and custom devices. The company serves various markets, including automotive, industrial, communications, consumer electronics, and computing. Established in 1999, ON Semiconductor focuses on energy-efficient innovation and provides solutions that enhance the performance of electronic systems while reducing energy consumption. The company's commitment to sustainability and technology development positions it as a key player in the semiconductor industry.

Application

The NVMYS6D2N06CLTWG is a high-performance N-channel MOSFET typically used in power management applications. Its key application areas include DC-DC converters, power supplies, motor drives, and battery management systems. Additionally, it can be utilized in load switches and for driving high-efficiency power circuits in consumer electronics, automotive systems, and industrial automation.

Equivalent

The NVMYS6D2N06CLTWG is a dual N-channel MOSFET. Equivalent products include the NVMYS6D2N06 and the NVMYS6D2N06CT, among others. Always check specific parameters such as voltage, current ratings, and package type to ensure compatibility when selecting alternatives.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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