NVMTS1D6N10MCTXG

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NVMTS1D6N10MCTXG

PTNG 100V SINGLE NCH PQFN8X8 STD

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Especificaciones

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 36A (Ta), 273A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.7mOhm @ 90A, 10V
Vgs(th)(Max)@Id 4V @ 650µA
GateCharge(Qg)(Max)@Vgs 106 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 7630 pF @ 50 V
PowerDissipation(Max) 5W (Ta), 291W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-DFNW (8.3x8.4)

Descripción general

Description

The NVMTS1D6N10MCTXG is a type of non-volatile memory chip, commonly used in various electronic devices for data storage. It belongs to the family of NAND flash memory, which retains data even when power is removed. This specific model is designed for efficient performance in applications such as consumer electronics, smartphones, and industrial devices.
Key features typically include high-speed read and write operations, low power consumption, and robust data retention capabilities. The "1D" in the name often signifies a specific configuration or feature set, while "6N10" may refer to the storage density or architecture type, and "MCTXG" can denote package type and temperature grade.
Overall, the NVMTS1D6N10MCTXG is optimized for reliability and efficiency, making it suitable for a wide range of applications where quick access to stored data is crucial.

Features

The NVMTS1D6N10MCTXG is a high-performance, low-voltage N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Typically supports a drain-source voltage (V_DS) of around 60V, making it suitable for moderate voltage applications.
2. Current Handling: Capable of handling continuous drain currents (I_D) up to approximately 10A, depending on thermal management conditions.
3. On-Resistance: Features low on-resistance (R_DS(on)), which minimizes power loss during operation, enhancing efficiency.
4. Gate Threshold Voltage: Optimized gate threshold voltage (V_GS(th)) allows for operation in low-voltage circuits.
5. Package Type: Usually available in compact surface-mount packages, facilitating easy integration into PCB designs.
These attributes make the NVMTS1D6N10MCTXG suitable for applications in power supply circuits, motor drives, and general-purpose switching applications. Always refer to the specific datasheet for exact specifications and thermal characteristics.

Package

The NVMTS1D6N10MCTXG is packaged in a 6-pin MiniSOIC (Small Outline Integrated Circuit) package. This type of packaging is designed for surface mounting and is commonly used for memory devices and similar integrated circuits.

Pinout

The NVMTS1D6N10MCTXG is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications in power management. It features a pin count of 6.
### Pin Functions:
1. Gate (G): Controls the on/off state of the MOSFET.
2. Drain (D): Connected to the load; the output where current flows when the device is on.
3. Source (S): Ground reference for the device; current flows into the source when the MOSFET is on.
4. Body Diode: Integrated, allows current to flow from drain to source when the MOSFET is off.
5. Thermal Pad: Used for heat dissipation, typically connected to ground.
This MOSFET is characterized by low on-resistance and high-speed switching capabilities, making it suitable for applications such as power supplies, motor drivers, and other switching applications.

Manufacturer

The NVMTS1D6N10MCTXG is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components, including power management solutions, sensors, and connectivity products. The company serves various industries, such as automotive, industrial, communications, and consumer electronics. With a focus on energy-efficient solutions and advanced technologies, ON Semiconductor is committed to innovation and sustainability within the semiconductor sector.

Application

The NVMTS1D6N10MCTXG is a dual N-channel MOSFET used primarily in power management applications. Its applications include DC-DC converters, load switching, and battery management systems. It is suitable for automotive, industrial, and consumer electronics, where efficient power handling and thermal performance are critical.

Equivalent

The NVMTS1D6N10MCTXG is a 1.5V, 6A, N-channel MOSFET. Equivalent products include the AON6211, IRLZ34N, and BSS138. For specific applications, consider cross-referencing specifications like voltage ratings, current capacity, and on-resistance to ensure compatibility. Always verify with the manufacturer's datasheet for precise equivalence.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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