NVMFWS2D9N04XMT1G

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NVMFWS2D9N04XMT1G

SINGLE N-CHANNEL POWER MOSFET 40

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Especificaciones

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta), 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 15.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 25 V
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package 5-DFNW (4.9x5.9) (8-SOFL-WF)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFWS

Descripción general

Description

NVMFWS2D9N04XMT1G is a specific part number for a memory component, typically a flash memory device, produced by a semiconductor manufacturer. This component is part of a non-volatile memory family, indicating it retains data even when power is removed. The “2D” in the part number may refer to a specific architecture or configuration, while the “9N04X” may denote technical specifications such as density, speed, or interface type.
These devices are commonly used in various applications, including consumer electronics, automotive systems, and industrial equipment, where reliable data storage is crucial. Understanding the specifications of such components is essential for engineers and designers selecting the appropriate memory solutions for their projects. For more detailed information, consulting the manufacturer's datasheet is recommended, as it provides specifics on pin configuration, electrical characteristics, and operational guidelines.

Features

The NVMFWS2D9N04XMT1G is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. Key features include:
1. Voltage Rating: Typically operates at high voltages, making it suitable for various applications.
2. Low On-State Resistance (RDS(on)): This characteristic minimizes power loss during operation, enhancing efficiency.
3. High Switching Speed: Facilitates quick switching for better performance in high-frequency applications.
4. Thermal Performance: Designed to handle elevated temperatures, ensuring reliability and stability under load.
5. Compact Package: Often comes in a small footprint, aiding in space-saving designs in electronic applications.
6. Applications: Commonly used in DC-DC converters, power supplies, and motor drives.
Overall, the NVMFWS2D9N04XMT1G is suited for applications requiring efficient power management and thermal stability.

Package

The NVMFWS2D9N04XMT1G is packaged in a TDFN (Thin Dual Flat No-lead) format, which is a small, surface-mounted package ideal for applications requiring compact design and efficient thermal performance.

Pinout

The NVMFWS2D9N04XMT1G is a 4Mb (512K x 8) NAND Flash memory device. It typically features a 8-pin configuration. The pin functions are as follows:
1. CE# (Chip Enable) - Activates the device.
2. RE# (Read Enable) - Enables reading data from the memory.
3. WE# (Write Enable) - Enables writing data to the memory.
4. ALE (Address Latch Enable) - Latches the address during read/write operations.
5. CLE (Command Latch Enable) - Latches commands sent to the memory.
6. DQ0-DQ7 (Data Input/Output) - Bidirectional data pins for input and output.
7. VCC - Power supply pin.
8. GND - Ground pin.
This device is typically used in various applications for data storage, including consumer electronics and embedded systems.

Manufacturer

The manufacturer of the NVMFWS2D9N04XMT1G is Nexperia. Nexperia is a global semiconductor company that specializes in the production of discrete, logic, and MOSFET components. Formed as a spin-off from NXP Semiconductors in 2017, Nexperia focuses on providing high-performance semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its commitment to high quality, reliability, and efficiency in manufacturing, catering to a wide range of industries with its extensive portfolio of products.

Application

The NVMFWS2D9N04XMT1G is a high-performance N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, power supply units, motor drivers, and battery management systems. It is ideal for switching applications due to its low on-resistance and high efficiency, making it suitable for consumer electronics, automotive systems, and industrial applications.

Equivalent

The NVMFWS2D9N04XMT1G is a power MOSFET. Equivalent products include the NVMFS5C604NL, BSS139, and IRLZ44N. It's important to verify specifications such as voltage, current rating, and R_DS(on) for compatibility in specific applications. Always consult datasheets for detailed comparisons.

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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