NVMFS6H800NWFT1G

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NVMFS6H800NWFT1G

MOSFET N-CH 80V 28A/203A 5DFN

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Especificaciones

Package Tape & Reel (TR)
Series Automotive, AEC-Q101
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 80 V
Current-ContinuousDrain(Id)@25°C 28A (Ta), 203A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2.1mOhm @ 50A, 10V
Vgs(th)(Max)@Id 4V @ 330µA
GateCharge(Qg)(Max)@Vgs 85 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5530 pF @ 40 V
PowerDissipation(Max) 3.8W (Ta), 200W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

Descripción general

Description

The NVMFS6H800NWFT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications in power management and switching. This device features a low on-resistance and fast switching speeds, making it suitable for use in power supplies, motor control, and other applications requiring efficient power handling.
Key specifications include a maximum drain-source voltage of 60V, a continuous drain current capability of up to 80A, and a low gate threshold voltage. The MOSFET is housed in a compact package, which aids in thermal management and reduces the overall footprint in circuit designs.
Additionally, the NVMFS6H800NWFT1G is characterized by its robust thermal performance, ensuring reliable operation under various conditions. Its high efficiency and capability to handle significant power loads make it a popular choice in modern electronic designs, particularly in automotive and industrial applications.

Features

The NVMFS6H800NWFT1G is a high-performance N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power applications.
2. Current Rating: The device supports a continuous drain current (I_D) of up to 80A, enabling it to handle significant loads.
3. Low R_DS(on): It boasts a low on-resistance (R_DS(on)) of around 6.5 mΩ, which reduces power losses and improves efficiency.
4. Fast Switching: Designed for rapid switching capabilities, it enhances performance in high-frequency applications.
5. Thermal Management: The MOSFET features good thermal performance, allowing better heat dissipation during operation.
6. Package Type: It comes in a TO-220 package, facilitating easy mounting and heat sinking.
7. Applications: Commonly used in power supplies, motor control, and DC-DC converters.
Overall, the NVMFS6H800NWFT1G is ideal for demanding power applications requiring efficiency and reliability.

Package

The NVMFS6H800NWFT1G is packaged in a SOIC-8 (Small Outline Integrated Circuit) format. This package type is characterized by its compact size, making it suitable for surface mounting in various electronic applications.

Pinout

The NVMFS6H800NWFT1G is an N-channel MOSFET from ON Semiconductor. It has a pin count of 8, arranged in a standard TO-220 package.
Pin Functions:
1. Gate (G) – Controls the MOSFET's on/off state.
2. Drain (D) – The terminal where the current flows out.
3. Source (S) – The terminal where current flows in.
4. Tab (usually connected to the Source) – Used for heat dissipation.
This MOSFET is designed for high-performance applications, featuring low on-resistance and high-speed switching capabilities, making it suitable for use in power management circuits, DC-DC converters, and motor control applications.

Manufacturer

The manufacturer of the NVMFS6H800NWFT1G is ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, focusing on energy efficiency and connectivity. The company provides a wide range of products, including power management, analog, and logic devices, as well as sensors and integrated circuits. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor serves various industries, including automotive, industrial, communications, and consumer electronics. Its products are designed to meet the increasing demand for energy-efficient and high-performance solutions in the rapidly evolving electronics market.

Application

The NVMFS6H800NWFT1G is a high-performance N-channel MOSFET primarily used in power management applications, including DC-DC converters, power supplies, and motor control. Its low on-resistance and fast switching capabilities make it suitable for data centers, consumer electronics, automotive systems, and renewable energy applications. Additionally, it can be utilized in RF amplifiers and high-frequency applications due to its excellent thermal performance.

Equivalent

The NVMFS6H800NWFT1G is a power MOSFET. Equivalent products may include the NVMFS6H800NT1G and other similar N-channel MOSFETs from manufacturers like ON Semiconductor or Vishay. It’s essential to check specifications like voltage, current ratings, RDS(on), and package type to ensure compatibility. Always consult the datasheets for precise equivalency.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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