NVMFS4C03NWFT1G

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NVMFS4C03NWFT1G

MOSFET N-CH 30V 31.4A/143A 5DFN

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Especificaciones

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 31.4A (Ta), 143A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3071 pF @ 15 V
Power Dissipation (Max) 3.71W (Ta), 77W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS4

Descripción general

Description

The NVMFS4C03NWFT1G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a low on-resistance and fast switching capabilities, making it suitable for various power management tasks, including DC-DC converters and power supplies. This device operates on a voltage range of up to 30V and is optimized for high-frequency applications, offering improved thermal performance and reliability.
Key specifications include low gate threshold voltage, high current handling capability, and a compact package that facilitates efficient thermal dissipation. Its construction typically includes advanced semiconductor materials, enhancing performance in demanding conditions. The NVMFS4C03NWFT1G is often utilized in consumer electronics, automotive systems, and industrial applications where efficiency and compact design are crucial.
Overall, this MOSFET is an excellent choice for designers seeking reliable performance in power management circuits.

Features

The NVMFS4C03NWFT1G is a power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle continuous drain currents, often up to 40A, providing robust performance in demanding conditions.
3. Low On-Resistance: The device features a low R_DS(on), which enhances efficiency and reduces power loss during operation.
4. Fast Switching Speed: This MOSFET is optimized for fast switching, making it ideal for high-frequency applications like power converters.
5. Thermal Performance: It has a suitable thermal resistance, allowing for effective heat dissipation during operation.
6. Package Type: It is typically available in a compact DPAK package, facilitating easy integration into various circuits.
These attributes make the NVMFS4C03NWFT1G suitable for applications in power management, DC-DC converters, and motor control systems.

Package

The NVMFS4C03NWFT1G is packaged in a PowerSO-8 (also known as SO-8) format. This surface-mount package is designed for high-performance applications, featuring eight pins for efficient connectivity and thermal management.

Pinout

The NVMFS4C03NWFT1G is a N-channel MOSFET with a pin count of 6. Its primary function is to serve as a low-side switch in power management applications, providing efficient control of power delivery in various electronic circuits.
The device features low on-resistance and fast switching capabilities, making it suitable for applications like synchronous buck converters, power management in computing, and automotive systems. The six pins typically consist of the gate, drain, and source connections, along with additional pins for DPAK or similar package types, facilitating soldering and thermal management.
For detailed specifications, including electrical characteristics and maximum ratings, refer to the manufacturer's datasheet.

Manufacturer

The NVMFS4C03NWFT1G is manufactured by ON Semiconductor Corporation. ON Semiconductor is a global semiconductor provider specializing in innovative solutions for various applications, including automotive, industrial, communications, computing, and consumer electronics. The company focuses on energy-efficient products and technologies, offering a wide range of components such as analog, power management, logic, and discrete devices. Established in 1999, ON Semiconductor has grown through acquisitions and partnerships, positioning itself as a key player in the semiconductor industry.

Application

The NVMFS4C03NWFT1G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in power management applications. Its key areas of application include DC-DC converters, power supply circuits, motor drives, and load switching in consumer electronics, automotive systems, and industrial equipment. Its features enable efficient energy conversion and thermal performance, making it suitable for high-frequency and high-efficiency circuits.

Equivalent

The NVMFS4C03NWFT1G is a N-channel MOSFET. Equivalent products include the NVMFS4C03N, IRLZ44N, and BSS138. Check specifications for gate threshold voltage, R_DS(on), and current ratings to ensure compatibility. Always verify with the manufacturer’s data sheets for the best match for your application.

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

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Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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