NVMFS005N10MCLT1G

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NVMFS005N10MCLT1G

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Especificaciones

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 18.4A (Ta), 108A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 5.1mOhm @ 34A, 10V
Vgs(th)(Max)@Id 3V @ 192µA
GateCharge(Qg)(Max)@Vgs 55 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4100 pF @ 50 V
PowerDissipation(Max) 3.8W (Ta), 131W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

Descripción general

Description

The NVMFS005N10MCLT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of 5A, making it suitable for various switching applications in power supplies, motor drivers, and converters.
Its low on-resistance (R_DS(on)) ensures minimal power loss during operation, enhancing performance in high-efficiency circuits. The device is housed in a compact surface-mount package (SO-8), facilitating easy integration into space-constrained designs.
Key specifications include a gate threshold voltage (V_GS(th)) of 1-3V, which allows for easy driving with standard logic-level signals. The NVMFS005N10MCLT1G is characterized by fast switching speeds, making it ideal for applications requiring rapid on-off control. Overall, this MOSFET is a reliable choice for engineers looking to optimize power efficiency in their designs.

Features

The NVMFS005N10MCLT1G is an N-channel MOSFET designed for various applications. Key features include:
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, enabling it to handle high-voltage applications.
- Current Rating: The continuous drain current (I_D) is up to 5A, suitable for moderate power requirements.
- R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 5 mΩ at V_GS = 10V, which helps in reducing power losses and improving efficiency.
- Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is low, typically around 2 to 4V, allowing for easy control with low-voltage logic levels.
- Package: It comes in a DPAK (TO-252) package, which is suitable for surface-mount applications.
- Fast Switching: The device is optimized for fast switching speeds, making it ideal for applications like power management and DC-DC converters.
Overall, the NVMFS005N10MCLT1G is suited for high-efficiency power switching applications in consumer electronics and automotive sectors.

Package

The NVMFS005N10MCLT1G is packaged in a DPAK (TO-252) package type, which is a surface-mount device design commonly used for power MOSFETs, offering efficient thermal performance and compact dimensions.

Pinout

The NVMFS005N10MCLT1G is an N-channel MOSFET, specifically designed for power applications. It features a total of 5 pins. The pin functions are as follows:
1. Gate (G) - This pin controls the MOSFET operation; applying a voltage here allows the device to conduct.
2. Drain (D) - This is the output pin where current flows out; it's connected to the load.
3. Source (S) - This pin is connected to ground or the negative terminal; it completes the circuit for current flow.
The device is optimized for low on-resistance and high-speed switching, making it suitable for various applications including power management and motor control. Always refer to the manufacturer's datasheet for detailed specifications and characteristics.

Manufacturer

The manufacturer of the NVMFS005N10MCLT1G is ON Semiconductor. ON Semiconductor is a semiconductor company that designs, manufactures, and markets a wide range of electronic components, including power management, analog, and logic devices. The company serves various industries such as automotive, communications, computing, consumer, and industrial. ON Semiconductor is known for its focus on energy efficiency and innovative technologies that support the growing demand for smart and connected devices.

Application

The NVMFS005N10MCLT1G is a MOSFET designed for power management applications. Its key applications include DC-DC converters, power supplies, motor drives, and automotive systems. It is suitable for high-frequency switching, offering low on-resistance and efficient thermal performance, making it ideal for use in consumer electronics, renewable energy systems, and industrial automation.

Equivalent

The NVMFS005N10MCLT1G is a N-channel MOSFET. Equivalent products include the IRF540, BSS138, and FQP50N10. However, always check specific parameters like voltage, current ratings, and package type to ensure compatibility for your application.

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