NVF3055L108T1G

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NVF3055L108T1G

MOSFET N-CH 60V 3A SOT223

  • Fabricante
  • Mfr. Parte #NVF3055L108T1G
  • Paquete SOT223
  • Hoja de datos
  • En stock6036

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Especificaciones

Package Cut Tape (CT),Bulk
Series Automotive, AEC-Q101
ProductStatus Not For New Designs
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 3A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 5V
RdsOn(Max)@IdVgs 120mOhm @ 1.5A, 5V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 15 nC @ 5 V
Vgs(Max) ±15V
InputCapacitance(Ciss)(Max)@Vds 440 pF @ 25 V
PowerDissipation(Max) 1.3W (Ta)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-223 (TO-261)

Descripción general

Description

The NVF3055L108T1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It features a low on-resistance (R_DS(on)), which minimizes power loss and heat generation, making it suitable for use in power supplies, motor drives, and other applications requiring efficient switching.
With a maximum drain-source voltage (V_DS) rating of 55V and a continuous drain current (I_D) capability of up to 30A, the NVF3055L108T1G is capable of handling significant power levels. Its fast switching speed enhances performance in high-frequency applications. Additionally, it is available in a compact TO-220 package, facilitating easy thermal management and integration into various circuit designs.
Overall, the NVF3055L108T1G is an ideal choice for designers seeking reliable and efficient MOSFET solutions in their electronic projects.

Features

The NVF3055L108T1G is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for various power management tasks.
2. Continuous Drain Current: Supports a continuous drain current (I_D) of up to 30A, which is ideal for high-current applications.
3. R_DS(on): Low on-resistance (R_DS(on)) of approximately 0.025 ohms at 10V gate drive, ensuring minimal power loss and heat generation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for efficient switching at lower voltages.
5. Package Type: Offered in a TO-220 package, facilitating easy heat dissipation and mechanical robustness.
6. Applications: Commonly used in power supplies, motor drivers, and other switching applications due to its high performance.
Overall, the NVF3055L108T1G is suitable for various industrial and commercial electronic applications requiring effective power management.

Package

The NVF3055L108T1G is packaged in a TO-220 form factor, which is a type of metal can package commonly used for power devices. This package type provides good heat dissipation and is suitable for high-power applications.

Pinout

The NVF3055L108T1G is a N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET; a voltage applied here allows current to flow between the drain and source.
2. Drain (D): The pin where the current flows out of the MOSFET. It connects to the load.
3. Source (S): This pin is connected to ground or the negative side of the power supply, allowing current to flow into the drain.
The NVF3055L108T1G is designed for high-speed switching applications and can handle high voltages and currents, making it suitable for power management in various electronic circuits.

Manufacturer

The NVF3055L108T1G is manufactured by ON Semiconductor, which is a global supplier of semiconductor solutions. ON Semiconductor specializes in delivering a variety of products including discrete components, analog ICs, and power management solutions. The company focuses on energy-efficient technologies and serves multiple markets such as automotive, industrial, communications, computing, and consumer electronics. Founded in 1999, ON Semiconductor has expanded its reach through acquisitions and now operates worldwide, providing innovative solutions that cater to the growing demand for energy-efficient electronics.

Application

The NVF3055L108T1G is a N-channel MOSFET commonly used in power switching applications, including motor control, power management, and DC-DC converters. Its low on-resistance and high-speed switching capabilities make it suitable for applications in power supplies, automotive systems, and renewable energy systems. Additionally, it can be utilized in load switching and electronic ballast circuits.

Equivalent

The NVF3055L108T1G is a N-channel MOSFET. Equivalent products include the IRF3055, STP3055, and FQP30N55. Always verify specifications such as voltage rating, current rating, and RDS(on) to ensure compatibility for your specific application.

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