NVB190N65S3F

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NVB190N65S3F

MOSFET N-CH 650V 20A D2PAK-3

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Especificaciones

Supplier onsemi,Rochester Electronics, LLC
Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series Automotive, AEC-Q101, SuperFET® III
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 20A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 190mOhm @ 10A, 10V
Vgs(th)(Max)@Id 5V @ 430µA
GateCharge(Qg)(Max)@Vgs 34 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1605 pF @ 400 V
PowerDissipation(Max) 162W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D²PAK-3 (TO-263-3)

Descripción general

Description

The NVB190N65S3F is a high-performance N-channel MOSFET designed for use in power electronics applications. With a voltage rating of 650V and a current handling capability of 190A, it is suitable for high-voltage and high-current switching applications, such as inverters, power supplies, and motor drives.
This device features low on-resistance (RDS(on)), which minimizes conduction losses and enhances efficiency. Additionally, it has a fast switching speed, making it ideal for applications requiring rapid switching cycles.
The NVB190N65S3F is built using advanced semiconductor technology, providing excellent thermal performance and reliability. Its typical applications include renewable energy systems, industrial equipment, and electric vehicles.
Overall, the NVB190N65S3F is a robust choice for engineers looking to improve the performance and efficiency of their power electronic designs.

Features

The NVB190N65S3F is a high-voltage N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) up to 190A, allowing for high power handling.
3. R_DS(on): It has a low on-resistance (R_DS(on)), typically around 0.19 ohms, which minimizes conduction losses during operation.
4. Fast Switching: The device is optimized for fast switching speeds, making it ideal for applications such as power converters, inverters, and motor drives.
5. Thermal Performance: Good thermal performance with a maximum junction temperature of 175°C, allowing for reliable operation under demanding conditions.
6. Package: Usually available in a TO-247 package, facilitating effective heat dissipation.
These features make the NVB190N65S3F suitable for a range of industrial and consumer electronic applications requiring efficient power management.

Package

The NVB190N65S3F is typically packaged in a TO-247 format. This package type is known for its robust construction and good thermal performance, making it suitable for high-power applications.

Pinout

The NVB190N65S3F is an N-channel MOSFET with a total of 5 pins. Its primary functions include:
1. Gate (G): This pin controls the MOSFET operation. A voltage applied here allows the MOSFET to turn on and conduct current between the drain and source.
2. Drain (D): This pin is the output terminal where the load is connected. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit. It is where the current exits the MOSFET.
The pin configuration typically follows the standard arrangement for power MOSFETs, facilitating easy integration into circuits. The device is primarily used in applications such as power management, switching, and amplification due to its high efficiency and fast switching capabilities.

Manufacturer

The NVB190N65S3F is manufactured by Nexperia, a global semiconductor company that specializes in discrete, logic, and MOSFET devices. Nexperia was originally part of NXP Semiconductors and focuses on providing high-quality components for various applications, including automotive, industrial, and consumer electronics. The company emphasizes reliability and efficiency in its products, which are used in a wide range of electronic devices and systems. Nexperia is known for its commitment to innovation and quality in semiconductor manufacturing.

Application

The NVB190N65S3F is a N-channel MOSFET primarily used in power electronics applications, including:
1. Switching Power Supplies - For efficient voltage regulation.
2. Motor Drives - Inverters for electric motors.
3. DC-DC Converters - For energy conversion in various devices.
4. Power Management - In consumer electronics and automotive applications.
5. LED Drivers - For efficient light output control.
Its high voltage and current ratings make it suitable for demanding applications in industrial and automotive sectors.

Equivalent

The NVB190N65S3F is a 650V N-channel MOSFET. Equivalent products include the Infineon IPP190N65H5, STMicroelectronics STP190N65M5, and ON Semiconductor NTMFS5C650N. Always verify specifications like R_DS(on), V_GS, and package type for compatibility.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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