NTMFS5C410NLT1G

Las imágenes son solo para referencia

NTMFS5C410NLT1G

MOSFET N-CH 40V 46A/302A 5DFN

  • Fabricante
  • Mfr. Parte #NTMFS5C410NLT1G
  • Paquete SO-8
  • Hoja de datos
  • En stock5866

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 46A (Ta), 302A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 0.9mOhm @ 50A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 143 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 8862 pF @ 25 V
PowerDissipation(Max) 3.2W (Ta), 139W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

Descripción general

Description

The NTMFS5C410NLT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. It features a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of up to 55A, making it suitable for use in power management systems, motor control, and DC-DC converters.
Key specifications include a low on-resistance (R_DS(on)) in the range of 4.1 mΩ, which enables minimal power loss during operation, and a fast switching speed that enhances overall circuit efficiency. The package is typically in a TO-220 or similar form factor, allowing for easy thermal management.
This MOSFET is ideal for applications requiring high power density and efficiency, such as renewable energy systems, battery management, and automotive electronics. Overall, the NTMFS5C410NLT1G is a versatile component for modern electronic designs, offering robust performance in demanding environments.

Features

The NTMFS5C410NLT1G is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power management applications.
2. Current Rating: The device supports continuous drain current (I_D) of up to 60A, allowing it to handle significant power loads.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 8.5 mΩ at V_GS of 10V, which minimizes conduction losses and enhances efficiency.
4. Fast Switching Speed: The device is optimized for fast switching, reducing transition losses in applications such as DC-DC converters and motor control.
5. Thermal Performance: It features a robust thermal performance with a maximum junction temperature of 175°C, supporting high-temperature applications.
6. Package: Housed in a DPAK package, it provides efficient thermal dissipation and space-saving design.
Overall, the NTMFS5C410NLT1G is ideal for automotive, industrial, and consumer electronics applications where efficiency and reliability are critical.

Package

The NTMFS5C410NLT1G is packaged in a TO-220 form factor. This package type is designed for high-power applications, providing effective heat dissipation and ease of mounting.

Pinout

The NTMFS5C410NLT1G is a N-channel MOSFET with a pin count of 8. It is typically housed in a DPAK or similar surface mount package.
Pin Functions:
1. Gate (G): Controls the MOSFET operation; applying a voltage turns the device on or off.
2. Drain (D): The terminal where the output voltage is taken; current flows out of this pin when the device is on.
3. Source (S): Connects to ground or the lower potential in the circuit; current flows into this pin when the device is on.
4. Others: In a typical package, remaining pins may include a thermal pad and potentially additional drain and source pins for better performance and thermal management.
This MOSFET is widely used in power management applications due to its low on-resistance and fast switching capabilities.

Manufacturer

The NTMFS5C410NLT1G is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in the production of discrete, logic, and MOSFET components. The company, which was spun off from NXP Semiconductors in 2017, focuses on providing high-performance semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. Nexperia is known for its commitment to quality and efficiency in manufacturing, emphasizing high-volume production and supply reliability.

Application

The NTMFS5C410NLT1G is a N-channel MOSFET commonly used in applications such as power management, DC-DC converters, motor control, and switching power supplies. Its low on-resistance and high efficiency make it suitable for consumer electronics, automotive systems, and renewable energy systems. It is ideal for applications requiring fast switching and minimal power loss.

Equivalent

The NTMFS5C410NLT1G is an N-channel MOSFET. Equivalent products include the BSS123, SI2302, and 2N7000. Always check specifications such as voltage, current ratings, and RDS(on) to ensure compatibility for your specific application.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria