NTMFS4C10NT1G

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NTMFS4C10NT1G

MOSFET N-CH 30V 8.2A 5DFN

  • Fabricante
  • Mfr. Parte #NTMFS4C10NT1G
  • Paquete SO-8FL
  • Hoja de datos
  • En stock2276

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 8.2A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 6.95mOhm @ 30A, 10V
Vgs(th)(Max)@Id 2.2V @ 250µA
GateCharge(Qg)(Max)@Vgs 9.7 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 987 pF @ 15 V
PowerDissipation(Max) 750mW (Ta), 23.6W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

Descripción general

Description

The NTMFS4C10NT1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. It features a low on-resistance and fast switching speeds, making it suitable for use in various circuits, including DC-DC converters, power supplies, and motor control applications.
Key specifications include a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of up to 10A at room temperature. Its low gate threshold voltage (V_GS(th)) and high-speed switching capabilities enhance its performance in high-frequency applications.
The device is housed in a surface-mount package (typically SOT-23 or similar), facilitating easy integration into compact designs. It is commonly used in consumer electronics, automotive, and industrial applications where efficiency and reliability are crucial. Overall, the NTMFS4C10NT1G is a versatile component for engineers looking to optimize power systems.

Features

The NTMFS4C10NT1G is an N-channel MOSFET designed for high-speed switching applications. It features a maximum drain-source voltage (VDS) of 40V and a continuous drain current (ID) of 10A, making it suitable for power management in various electronic devices. The device has a low on-resistance (RDS(on)) of approximately 7.5 mΩ at a gate-source voltage (VGS) of 10V, enhancing its efficiency by minimizing power loss during operation.
It also offers fast switching capabilities, making it ideal for applications like DC-DC converters, motor drives, and power supplies. The NTMFS4C10NT1G is packaged in a TO-220 format, allowing for effective thermal dissipation and easy integration into circuits. Additionally, it exhibits a high level of reliability and robustness, which is essential for demanding industrial applications. Overall, this MOSFET is well-suited for applications requiring efficient power management and high performance.

Package

The NTMFS4C10NT1G is packaged in a TO-220 form factor, which is commonly used for power MOSFETs. This package type features a metal tab for heat dissipation and is suitable for applications requiring efficient thermal management.

Pinout

The NTMFS4C10NT1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It features a pin count of 8. The primary functions of this MOSFET include switching and amplification in electronic circuits, suitable for applications such as power management, DC-DC converters, and motor control.
The pins are typically arranged as follows:
1. Gate (G) - Controls the MOSFET turn-on and turn-off.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - Connected to ground or the negative side of the circuit.
4. Other pins include additional connections for thermal or mounting purposes, depending on the package type (e.g., SOT-23).
Key specifications include a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of 30A, making it suitable for high-efficiency applications.

Manufacturer

The NTMFS4C10NT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, analog, and digital components, primarily for automotive, industrial, communications, and consumer electronics applications. The company focuses on providing energy-efficient and high-performance semiconductor technologies, enabling various applications, including power supply, motor control, and signal processing. Established through multiple mergers and acquisitions, ON Semiconductor has established itself as a key player in the semiconductor industry, with a strong commitment to innovation and sustainability.

Application

The NTMFS4C10NT1G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) primarily used in power management applications. Its application areas include switching power supplies, DC-DC converters, motor drivers, and electric vehicles. It is also utilized in load switching, voltage regulation, and high-efficiency power systems due to its low on-resistance and fast switching capabilities.

Equivalent

The NTMFS4C10NT1G is an N-channel MOSFET. Equivalent products include the BSS123, IRF520, and FDS6910. Check specifications like voltage, current rating, and RDS(on) to ensure compatibility for your specific application. Always confirm with the manufacturer’s datasheets for precise matching.

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