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NTJD4401NT1G
MOSFET 2N-CH 20V 630MA SOT363
- Fabricante
- Mfr. Parte #NTJD4401NT1G
- Paquete SC-88
- Hoja de datos
- En stock5409
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 630mA |
| RdsOn(Max)@IdVgs | 375mOhm @ 630mA, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 3nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 46pF @ 20V |
| Power-Max | 270mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-TSSOP, SC-88, SOT-363 |
Descripción general
Description
The "1G" in its designation typically indicates that it comes in a specific packaging configuration suitable for surface-mount applications. Its compact size and reliable performance make it a popular choice in both consumer electronics and industrial applications.
When selecting this MOSFET for a project, consider its voltage rating, current capacity, and thermal performance to ensure compatibility with your circuit design.
Features
1. Voltage Rating: It typically has a drain-source voltage (VDS) up to 40V, making it suitable for medium-voltage applications.
2. Current Capacity: The device can handle continuous drain currents of up to 30A, providing robust performance in demanding environments.
3. Low On-Resistance: The RDS(on) is typically low, around 0.025 ohms at a gate-source voltage (VGS) of 10V, which enhances efficiency by reducing power losses.
4. Fast Switching Speed: Offers fast switching capabilities, making it ideal for high-frequency applications.
5. Thermal Performance: Features a thermal resistance (RθJA) that supports effective heat dissipation, allowing for stable operation under high loads.
6. Package Type: Generally comes in a TO-220 package, facilitating easy mounting and heat management.
These features make the NTJD4401NT1G suitable for applications like DC-DC converters, motor drives, and other power-related circuits.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): The drain pin connects to the load, where the current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, completing the circuit when the MOSFET is activated.
The device is designed for applications such as power management and switching. Its specifications include low R_DS(on) to ensure efficient operation.
Manufacturer
Application
Equivalent
1. BSS138 - Low voltage MOSFET.
2. 2N7000 - Popular small-signal N-channel MOSFET.
3. BS170 - Another similar small-signal MOSFET.
4. IRF520 - Higher power N-channel MOSFET, though with different ratings.
Always check specific datasheets for detailed specifications and ensure compatibility for your application.
Envío
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ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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