NTJD1155LT1G

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NTJD1155LT1G

MOSFET N/P-CH 8V 1.3A SOT363

  • Fabricante
  • Mfr. Parte #NTJD1155LT1G
  • Paquete SC-88-6
  • Hoja de datos
  • En stock2408

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N and P-Channel
FETFeature Standard
DraintoSourceVoltage(Vdss) 8V
Current-ContinuousDrain(Id)@25°C 1.3A
RdsOn(Max)@IdVgs 175mOhm @ 1.2A, 4.5V
Vgs(th)(Max)@Id 1V @ 250µA
Power-Max 400mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 6-TSSOP, SC-88, SOT-363

Descripción general

Description

The NTJD1155LT1G is a compact, low-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for a variety of electronic applications, particularly for power management and switching. It features a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of up to 5.5A, making it suitable for low-voltage circuits.
The device is housed in a small SOT-23 package, allowing for efficient space utilization on PCBs (Printed Circuit Boards). It offers low R_DS(on) (on-resistance), which minimizes power loss during operation and enhances thermal performance. The NTJD1155LT1G is ideal for applications such as LED drives, battery management, and power supplies, where efficiency and reliability are critical.
Additionally, it includes built-in protection features that contribute to its robustness in various operating conditions. Overall, the NTJD1155LT1G is a versatile choice for engineers looking to optimize circuit designs in compact and efficient ways.

Features

The NTJD1155LT1G is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 30A, allowing it to manage significant loads.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 10 mΩ, enhancing efficiency by minimizing power loss during operation.
4. Fast Switching: The NTJD1155LT1G boasts fast switching speeds, which are ideal for high-frequency applications.
5. Package: It is housed in a DPAK package, ensuring good thermal performance and ease of mounting on PCBs.
Overall, the NTJD1155LT1G is ideal for applications in power supplies, motor drivers, and other systems requiring efficient switching and control.

Package

The NTJD1155LT1G is packaged in a SOT-23 surface-mount package. This compact package type is designed for efficient use of space on PCBs and provides good thermal performance suitable for various electronic applications.

Pinout

The NTJD1155LT1G is a N-channel MOSFET with a total of 6 pins. Its primary functions include acting as a switch or amplifier in various electronic circuits. The key pin configurations are:
1. Gate (G): This pin controls the MOSFET's operation; when a voltage is applied here, it enables the device to conduct.
2. Drain (D): The drain pin is where the load is connected, and it is the path through which current flows when the MOSFET is turned on.
3. Source (S): This pin connects to the ground or the negative rail of the circuit, completing the circuit path when the device is on.
The device is commonly used in power management, switching applications, and signal amplification due to its efficiency and fast switching capabilities. It features low on-resistance and is suitable for low-voltage applications.

Manufacturer

The NTJD1155LT1G is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. Established in 1999, ON Semiconductor specializes in designing and manufacturing a wide range of electronic components, including discrete semiconductors, analog, and mixed-signal devices. The company focuses on providing efficient and innovative solutions for various applications, including automotive, industrial, telecommunications, consumer electronics, and computing. ON Semiconductor is committed to sustainability and advancing technology in areas like energy efficiency and connectivity.

Application

The NTJD1155LT1G is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, LED drivers, and motor control. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power applications in consumer electronics, automotive systems, and industrial equipment.

Equivalent

The NTJD1155LT1G is a dual N-channel MOSFET. Equivalent products include the BSS138, BSS123, and 2N7000 for lower power applications. For higher current capacity, consider the IRF3708 or the AO3400. Always verify specifications like V_DS, I_D, and R_DS(on) to ensure compatibility with your specific application.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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