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NTHD4102PT1G
MOSFET 2P-CH 20V 2.9A CHIPFET
- Fabricante
- Mfr. Parte #NTHD4102PT1G
- Paquete 8-SMD, Flat Lead
- Hoja de datos
- En stock2438
100% original & Nuevo
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Garantía de 365 días
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 2.9A |
| RdsOn(Max)@IdVgs | 80mOhm @ 2.9A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 8.6nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 750pF @ 16V |
| Power-Max | 1.1W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SMD, Flat Lead |
Descripción general
Description
NTHD4102PT1G comes in a compact package, allowing for space-saving designs in modern electronics. Its characteristics, such as low gate threshold voltage and high input impedance, contribute to enhanced efficiency and performance in applications ranging from consumer electronics to industrial systems.
When integrating NTHD4102PT1G into designs, considerations include thermal management, gate drive requirements, and the load conditions to optimize performance and reliability.
Features
1. Low R_DS(on): Provides efficient performance with minimal power loss, enhancing the overall efficiency of the circuit.
2. High Speed: Fast switching capabilities make it suitable for high-frequency applications.
3. Low Gate Charge (Q_g): Reduces driving power requirements, allowing for lower energy consumption in control circuits.
4. High Voltage Rating: Capable of handling high voltages, making it versatile for different applications.
5. Robust Package: Available in a surface-mount package, optimized for space-saving designs.
These features make the NTHD4102PT1G ideal for use in DC-DC converters, load switching, and other power management applications.
Package
Pinout
1. Gate 1 (G1) - Controls the operation of the first N-channel MOSFET.
2. Drain 1 (D1) - The drain terminal for the first MOSFET.
3. Source 1 (S1) - The source terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the operation of the second N-channel MOSFET.
5. Drain 2 (D2) - The drain terminal for the second MOSFET.
6. Source 2 (S2) - The source terminal for the second MOSFET.
This component is typically used in applications requiring low on-resistance and fast switching speeds, such as power management and switching circuits.
Manufacturer
Application
Equivalent
1. BSS138
2. 2N7000
3. BS170
4. NTD5865N
Ensure to check the specifications, such as voltage, current ratings, and package type, to confirm compatibility for your specific application.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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