NTH4L030N120M3S

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NTH4L030N120M3S

SILICON CARBIDE (SIC) MOSFET EL

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Especificaciones

Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 39mOhm @ 30A, 18V
Vgs(th) (Max) @ Id 4.4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs 107 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 2430 pF @ 800 V
Power Dissipation (Max) 313W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4

Descripción general

Description

The NTH4L030N120M3S is a high-performance N-channel MOSFET designed for power management applications. It features a maximum drain-source voltage (Vds) of 120V and a continuous drain current (Id) rating of 30A, making it suitable for high-voltage applications. The device is optimized for low on-resistance (Rds(on)), which enhances efficiency and reduces heat generation during operation, important in applications like DC-DC converters and motor drives.
The package typically used for this MOSFET is a TO-220, facilitating easy heat dissipation. Its fast switching capabilities contribute to improved performance in high-frequency applications.
Additionally, the NTH4L030N120M3S is characterized by its ruggedness and reliability, ensuring stable performance under varying thermal and electrical conditions. Overall, it is a versatile component for engineers looking to build efficient power electronic systems.

Features

The NTH4L030N120M3S is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 120V, making it suitable for high-voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is 30A, allowing it to handle significant loads.
3. Low R_DS(on): The device boasts a low on-resistance (R_DS(on)), typically around 0.030 ohms, which enhances efficiency and reduces power loss during operation.
4. Fast Switching: Designed for high-speed switching applications, it offers fast turn-on and turn-off times.
5. Thermal Performance: It has a high thermal conductivity with a low thermal resistance, ensuring effective heat dissipation.
6. Package Type: Available in a TO-220 package, which aids in heat sinking and mounting.
These characteristics make the NTH4L030N120M3S suitable for use in power management, motor control, and other applications requiring efficient and reliable switching.

Package

The NTH4L030N120M3S is packaged in a DPAK (TO-252) format. This surface-mount package is designed for high-power applications, providing efficient heat dissipation and compact size for circuit board integration.

Pinout

The NTH4L030N120M3S is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a total of 8 pins. Its main functions include acting as a switch or amplifier in power management applications, suitable for high-efficiency designs.
The pin configuration is typically as follows:
1. Gate (G) - Controls the MOSFET's operation.
2. Drain (D) - The output where current flows out when the device is turned on.
3. Source (S) - The terminal through which current enters the MOSFET.
The NTH4L030N120M3S is designed for high voltage (120V) and high current (30A) applications, making it suitable for power supplies, inverters, and motor control systems. Its low on-resistance contributes to minimal power loss, enhancing efficiency in various electronic circuits. Always refer to the specific datasheet for detailed pinout and electrical characteristics for your application.

Manufacturer

The NTH4L030N120M3S is a product manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in a wide range of technologies, including power management, analog, sensors, timing, logic, interface, discrete, and custom devices. The company serves various markets, including automotive, industrial, communications, computing, consumer electronics, and medical. Established through a series of acquisitions, ON Semiconductor focuses on providing innovative solutions for energy-efficient electronics and fostering sustainability in its operations and products.

Application

The NTH4L030N120M3S is a high-performance N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor drives, and battery management systems. Its low on-resistance and high thermal stability make it suitable for use in efficient power supplies, renewable energy systems, and electric vehicle (EV) applications. Additionally, it can be utilized in high-frequency switching circuits and industrial automation.

Equivalent

The NTH4L030N120M3S is an N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and FQD30N120. Always verify specifications like voltage, current ratings, and switching characteristics before substitution.

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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