NTGS4141NT1G

Las imágenes son solo para referencia

NTGS4141NT1G

MOSFET N-CH 30V 3.5A 6TSOP

  • Fabricante
  • Mfr. Parte #NTGS4141NT1G
  • Paquete TSOP-6
  • Hoja de datos
  • En stock6705

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 3.5A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 25mOhm @ 7A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 12 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 560 pF @ 24 V
PowerDissipation(Max) 500mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 6-TSOP

Descripción general

Description

NTGS4141NT1G is a course typically focused on the principles and applications of geoscience, particularly in the context of natural resources, environmental science, or geotechnical engineering. The course likely covers topics such as geological formations, resource extraction methods, environmental impact assessments, and sustainable practices in geoscience.
Students can expect to engage in both theoretical learning and practical applications, potentially including fieldwork, laboratory analysis, and data interpretation. The course may also emphasize the use of modern technology in geosciences, such as GIS (Geographic Information Systems) and remote sensing.
Overall, NTGS4141NT1G aims to equip students with essential knowledge and skills for careers in geology, environmental consulting, and related fields.

Features

The NTGS4141NT1G is a N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is 10A, supporting various load conditions.
3. Low R_DS(on): It exhibits a low on-resistance, typically around 10 mΩ at 10V, which reduces power loss during operation.
4. Fast Switching Speed: This MOSFET is designed for rapid switching, enhancing performance in high-frequency applications.
5. Package Type: It is available in a surface-mount SO-8 package, offering compactness and ease of integration into circuits.
6. Thermal Performance: With a high thermal conductivity, it can effectively manage heat dissipation during operation.
These features make the NTGS4141NT1G suitable for use in power management, DC-DC converters, and motor control applications.

Package

The NTGS4141NT1G is packaged in a SOT-23-5 (small outline transistor) package type. This compact package design is commonly used for surface-mount applications.

Pinout

The NTGS4141NT1G is a dual N-channel MOSFET housed in a 6-pin SOT-23 package. It features a pin count of 6.
The pin functions are as follows:
1. Gate 1 (G1) - Controls the operation of the first N-channel MOSFET.
2. Drain 1 (D1) - The output for the first MOSFET, where the load is connected.
3. Source 1 (S1) - The source terminal for the first MOSFET, typically connected to ground.
4. Gate 2 (G2) - Controls the operation of the second N-channel MOSFET.
5. Drain 2 (D2) - The output for the second MOSFET.
6. Source 2 (S2) - The source terminal for the second MOSFET.
This device is commonly used in applications such as load switching, signal switching, and power management.

Manufacturer

The NTGS4141NT1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including power management, analog, sensors, and discrete components, catering to various industries such as automotive, industrial, and consumer electronics. The company focuses on energy-efficient technologies and provides innovative solutions for modern electronic devices. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor has grown through strategic acquisitions and has a significant presence in the semiconductor market, emphasizing sustainability and performance in its offerings.

Application

The NTGS4141NT1G is a low-power N-channel MOSFET, commonly used in applications such as battery-powered devices, power management, load switching, and signal amplification. Its fast switching capabilities make it suitable for RF applications and high-frequency circuits, while its low on-resistance enhances efficiency in power conversion and DC-DC converters. Additionally, it can be used in consumer electronics, automotive applications, and portable devices.

Equivalent

The NTGS4141NT1G is a dual N-channel MOSFET. Equivalent products include the SI4390DY, BSS138, and BS170, which may have similar characteristics in terms of voltage ratings, current handling, and package types. Always check the specific datasheets for exact specifications to ensure compatibility in your application.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

Similar