NTGS3441T1G

Las imágenes son solo para referencia

NTGS3441T1G

MOSFET P-CH 20V 1.65A 6TSOP

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 1.65A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 4.5V
RdsOn(Max)@IdVgs 90mOhm @ 3.3A, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 14 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 480 pF @ 5 V
PowerDissipation(Max) 500mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 6-TSOP

Descripción general

Description

NTGS3441T1G, likely a course code or designation, usually refers to a specific academic class or program within a curriculum, possibly in the fields of technology, science, or engineering. While specific details about NTGS3441T1G are not available, such courses typically cover foundational concepts, current practices, and emerging trends related to the subject matter.
Students can expect to engage in a combination of theoretical learning and practical applications, often involving hands-on projects, case studies, and collaborative work. The course may also emphasize critical thinking, problem-solving skills, and the use of relevant tools or technologies.
For precise information, including objectives, prerequisites, and outcomes, it's essential to consult the official course syllabus or academic department associated with NTGS3441T1G.

Features

The NTGS3441T1G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Low On-Resistance (R_DS(on)): Ensures efficient operation with minimal power loss.
2. High Voltage Rating: Capable of handling up to 30V, making it suitable for a variety of circuits.
3. High Speed Switching: Facilitates fast turn-on and turn-off times, enhancing performance in dynamic applications.
4. Low Gate Charge (Q_g): Reduces the drive power requirement, improving efficiency in switching applications.
5. Compact Package: Typically available in a surface-mount SO-8 package, allowing for space-saving designs.
6. Thermal Performance: Designed to operate efficiently at elevated temperatures, increasing reliability in demanding environments.
Overall, the NTGS3441T1G is ideal for use in power supplies, motor drives, and various electronic circuits requiring efficient switching capabilities.

Package

The NTGS3441T1G is packaged in a standard SOT-23 surface mount package. This compact package type is commonly used for integrating components into electronic circuits, providing efficient space utilization and ease of mounting on printed circuit boards (PCBs).

Pinout

The NTGS3441T1G is a dual N-channel MOSFET in a surface-mount package. It features a total of 8 pins. The pin configuration typically includes:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal for the first MOSFET.
3. Drain 1 (D1) - Drain terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal for the second MOSFET.
6. Drain 2 (D2) - Drain terminal for the second MOSFET.
7. Common (GND) - Ground reference for both MOSFETs.
8. NC (Not Connected) - No internal connection.
The device is designed for applications requiring high efficiency and switching performance, such as power management and DC-DC converters. Always refer to the manufacturer's datasheet for specific electrical characteristics and detailed pin functions.

Manufacturer

The NTGS3441T1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including analog, discrete, and power management semiconductors. The company primarily serves various industries, including automotive, industrial, communications, and consumer electronics. Established in 1999, ON Semiconductor has grown through a series of acquisitions and is recognized for its commitment to innovation and energy-efficient technologies. The NTGS3441T1G is a specific type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), used in applications such as power management and switching.

Application

The NTGS3441T1G is a dual N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, load switching, battery management systems, and LED drivers. It is suitable for high-efficiency switching and fast switching applications, often found in consumer electronics, automotive systems, and industrial equipment.

Equivalent

The NTGS3441T1G is a dual N-channel MOSFET. Equivalent products include:
1. BSS138 – N-channel MOSFET
2. 2N7000 – N-channel MOSFET
3. BS170 – N-channel MOSFET
4. SI2301 – N-channel MOSFET
Ensure to check specifications such as voltage, current ratings, and package type for compatibility.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

Similar