NTGD4167CT1G

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NTGD4167CT1G

MOSFET N/P-CH 30V 2.6/1.9A 6TSOP

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N and P-Channel
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V
Current-ContinuousDrain(Id)@25°C 2.6A, 1.9A
RdsOn(Max)@IdVgs 90mOhm @ 2.6A, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 5.5nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 295pF @ 15V
Power-Max 900mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case SOT-23-6 Thin, TSOT-23-6

Descripción general

Description

The NTGD4167CT1G is a dual N-channel MOSFET designed for power management applications. It features low on-resistance, which enhances efficiency and reduces heat generation in electronic circuits. With a maximum continuous drain current capability and a voltage rating suitable for various applications, the NTGD4167CT1G is ideal for use in DC-DC converters, motor drivers, and power switching applications.
The device is packaged in a compact surface-mount SO-8 format, facilitating easy integration into modern circuit designs. Its fast switching characteristics enable high-frequency operation, making it suitable for both consumer electronics and industrial applications.
Additionally, the NTGD4167CT1G incorporates ESD protection, ensuring reliability under harsh conditions. Overall, this MOSFET provides a balance of performance and efficiency, making it a popular choice among engineers for designing robust power solutions.

Features

The NTGD4167CT1G is a N-channel MOSFET designed for low power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DSS) of 30V, making it suitable for medium voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 10A, allowing it to drive loads effectively.
3. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 10 mΩ at V_GS = 10V, which contributes to efficient power management and minimal heat generation.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage ranges from 1V to 3V, ensuring it can be fully turned on with low gate voltages.
5. Package Type: It comes in a compact TO-220 package, facilitating easy thermal management and PCB integration.
6. Fast Switching Speed: It offers fast switching capabilities, making it suitable for high-frequency applications.
These attributes make the NTGD4167CT1G ideal for use in power management circuits, switching power supplies, and motor drivers.

Package

The NTGD4167CT1G is packaged in a DPAK (TO-252) format. This surface-mount package is designed for high-power applications, providing efficient thermal performance and space efficiency for various electronic circuits.

Pinout

The NTGD4167CT1G is a n-channel MOSFET from ON Semiconductor. It features a total of 8 pins. The pinout includes:
1. Gate (G) - Controls the MOSFET's operation.
2. Drain (D) - The output terminal where current flows out.
3. Source (S) - The terminal through which current enters.
The primary function of this device is to act as a switch or amplifier in electronic circuits. It is designed for low on-resistance and efficient switching applications. The NTGD4167CT1G is typically used in power management, load switching, and other applications requiring reliable control of high current and voltage. The high-speed performance and low gate charge make it suitable for various power electronics applications.
For detailed specifications, refer to the manufacturer's datasheet.

Manufacturer

The NTGD4167CT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in developing a wide range of semiconductor solutions, including power management, analog, logic, and digital components, as well as sensors and custom devices. The company serves various industries, including automotive, industrial, communications, computing, and consumer electronics. ON Semiconductor focuses on energy-efficient products and technologies, aiming to provide innovative solutions that meet the demands of an increasingly connected and efficient world.

Application

The NTGD4167CT1G is a high-voltage, N-channel MOSFET commonly used in various applications such as power management, DC-DC converters, motor drivers, and switching regulators. Its low on-resistance and fast switching capabilities make it suitable for efficient power delivery in consumer electronics, telecommunications, and automotive systems.

Equivalent

The NTGD4167CT1G is a N-channel MOSFET with a maximum drain-source voltage of 30V and a continuous drain current of 40A. Equivalent products include the IRLZ44N, BSS138, and AOD4184. Always verify specific parameters like R_DS(on) and package type to ensure compatibility in your application.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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