NTD6416ANLT4G

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NTD6416ANLT4G

MOSFET N-CH 100V 19A DPAK

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 19A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 74mOhm @ 19A, 10V
Vgs(th)(Max)@Id 2.2V @ 250µA
GateCharge(Qg)(Max)@Vgs 40 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1000 pF @ 25 V
PowerDissipation(Max) 71W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Descripción general

Description

The NTD6416ANLT4G is a dual N-channel MOSFET designed for various electronic applications, including power management and switching circuits. It features a low on-resistance, which enhances efficiency by reducing power loss during operation. This MOSFET has a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) rating of up to 16A, making it suitable for high-power applications.
The device is housed in a surface-mount package (DPAK), facilitating easy integration into compact circuit designs. Its fast switching capabilities enable efficient performance in high-frequency applications. Additionally, the NTD6416ANLT4G is optimized for low gate charge, which contributes to faster switching times and reduced drive requirements.
Typical applications include DC-DC converters, motor drivers, and various other power switching applications in consumer electronics, automotive, and industrial sectors. Overall, the NTD6416ANLT4G is valued for its reliability, efficiency, and versatility in power electronic solutions.

Features

The NTD6416ANLT4G is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 60V, making it suitable for various power management tasks.
2. Current Rating: It can handle continuous drain currents up to 20A, allowing it to efficiently power devices.
3. RDS(on): The on-resistance is low, typically around 0.025 ohms, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) is between 2V to 4V, enabling it to operate effectively with low drive voltages.
5. Package Type: It comes in a TO-220 package, providing good thermal performance and ease of heat dissipation.
6. Fast Switching: The device is optimized for fast switching applications, making it suitable for use in DC-DC converters and motor drives.
7. RoHS Compliant: The part is compliant with RoHS standards, ensuring it is free from hazardous substances.
Overall, the NTD6416ANLT4G is a versatile MOSFET ideal for a range of electronic applications.

Package

The NTD6416ANLT4G is packaged in a TO-220 form factor, which is a type of package used for power transistors and MOSFETs. This package provides good thermal management and is suitable for applications requiring efficient heat dissipation.

Pinout

The NTD6416ANLT4G is a dual N-channel MOSFET with a total of 8 pins. It is designed for high-speed switching applications and is often used in power management and load switching.
Pin Functions:
1. Gate1 (G1): Controls the first N-channel MOSFET.
2. Drain1 (D1): Connects to the load for the first MOSFET.
3. Source1 (S1): Common source connection for the first MOSFET.
4. Gate2 (G2): Controls the second N-channel MOSFET.
5. Drain2 (D2): Connects to the load for the second MOSFET.
6. Source2 (S2): Common source connection for the second MOSFET.
7. Drain/Source Connections: The Source pins are typically connected to ground for low-side switching.
8. Thermal Pad: Provides heat dissipation.
This device is suitable for applications requiring efficient control of loads, such as in power delivery systems.

Manufacturer

The NTD6416ANLT4G is manufactured by ON Semiconductor, a global provider of semiconductor-based solutions. ON Semiconductor specializes in designing and manufacturing a broad range of products, including power management, analog, and mixed-signal devices, as well as sensors and logic products. The company serves various industries such as automotive, industrial, consumer electronics, and communications. Their focus on energy-efficient technologies and innovative solutions positions them as a key player in the semiconductor market.

Application

The NTD6416ANLT4G is a N-channel MOSFET primarily used in applications such as power management, motor control, and switching circuits. It is ideal for high-efficiency power supplies, DC-DC converters, and battery management systems. Its low on-resistance and fast switching capabilities make it suitable for automotive, industrial, and consumer electronics applications.

Equivalent

The NTD6416ANLT4G is a N-channel MOSFET. Equivalent products include:
1. IRF3205
2. FDS6910
3. STP16NF06
4. BSS138
5. SiR404DP
When selecting an equivalent, ensure similar specifications such as voltage rating, current rating, RDS(on), and package type for compatibility.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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