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NTD5865NLT4G
MOSFET N-CH 60V 46A DPAK
- Fabricante
- Mfr. Parte #NTD5865NLT4G
- Paquete DPAK-3
- Hoja de datos
- En stock5937
100% original & Nuevo
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Garantía de 365 días
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Last Time Buy |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 46A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 16mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 29 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1400 pF @ 25 V |
| PowerDissipation(Max) | 71W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Descripción general
Description
The device is housed in a TO-220 package, allowing for effective heat dissipation, which is crucial in high-power applications. Its fast switching speeds make it advantageous for applications that require quick response times. The NTD5865NLT4G also incorporates a gate-source voltage rating that ensures safe operation and enhances reliability.
Overall, this MOSFET is widely used in consumer electronics, industrial systems, and renewable energy solutions due to its robustness and efficiency.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: It can handle continuous drain current (I_D) up to 60A.
3. R_DS(on): This MOSFET exhibits a low on-resistance, typically around 8 mΩ at a V_GS of 10V, which enhances efficiency.
4. Package: It comes in a TO-220 package, facilitating easy heat dissipation and mounting.
5. Fast Switching: Suitable for high-speed switching applications due to its low gate charge.
6. Thermal Performance: Designed for effective thermal management, allowing for robust performance in demanding environments.
7. Gate Threshold Voltage: The gate-source threshold voltage (V_GS) ranges from 2V to 4V, making it compatible with low-voltage drive circuits.
These features make the NTD5865NLT4G ideal for applications in automotive, industrial, and consumer electronics.
Package
Pinout
Pin Function:
1. Gate (G) - Controls the MOSFET operation; voltage applied here turns the device on/off.
2. Drain (D) - The output terminal where current flows out of the MOSFET.
3. Source (S) - The terminal through which current enters the MOSFET.
4. Body Diode - Internal diode for flyback protection in inductive load applications.
The device is designed for high efficiency with low R_DS(on) and fast switching capabilities, making it suitable for applications such as DC-DC converters, motor control, and load switching.
Manufacturer
Application
Equivalent
Envío
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Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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