NTD25P03LT4G

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NTD25P03LT4G

MOSFET P-CH 30V 25A DPAK

  • Fabricante
  • Mfr. Parte #NTD25P03LT4G
  • Paquete TO-252
  • Hoja de datos
  • En stock6020

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 25A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4V, 5V
RdsOn(Max)@IdVgs 80mOhm @ 25A, 5V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 20 nC @ 5 V
Vgs(Max) ±15V
InputCapacitance(Ciss)(Max)@Vds 1260 pF @ 25 V
PowerDissipation(Max) 75W (Tj)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Descripción general

Description

The NTD25P03LT4G is a P-channel MOSFET designed for various electronic applications, including power management and switching. It features a maximum drain-source voltage (V_DS) of -30V, allowing it to handle significant voltage levels in circuits. The device has a continuous drain current (I_D) rating of -25A, making it suitable for high-current applications.
Key attributes include low on-resistance (R_DS(on)), which improves efficiency by minimizing power loss during operation. The NTD25P03LT4G is housed in a TO-220 package, facilitating effective heat dissipation and ease of mounting on PCBs.
Applications typically include power supplies, motor drivers, and other switching applications where efficient control of high current and voltage is required. Its robust design ensures reliability in demanding environments. Users should refer to the manufacturer's datasheet for specific operational parameters and thermal management guidelines to ensure optimal performance in their specific applications.

Features

The NTD25P03LT4G is a P-channel MOSFET designed for efficient high-speed switching applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (VDS) of -30V, making it suitable for various power management applications.
2. Current Rating: Can handle a continuous drain current (ID) of up to -25A, which allows it to be used in medium to high-power circuits.
3. On-State Resistance: Exhibits a low RDS(on) value, typically around 0.1Ω, enabling reduced power loss and improved efficiency during operation.
4. Package: Comes in a TO-220 package, facilitating easy heat dissipation and integration into various designs.
5. Fast Switching: Features fast switching speeds, making it suitable for applications such as DC-DC converters, motor control, and load switching.
6. Temperature Range: Operates effectively in a wide temperature range, enhancing reliability in various environments.
These characteristics make the NTD25P03LT4G an ideal choice for power electronics in automotive, industrial, and consumer applications.

Package

The NTD25P03LT4G is packaged in a TO-220 package type. This package features a metal tab for heat dissipation and is commonly used for power transistors, providing efficient thermal management and electrical performance.

Pinout

The NTD25P03LT4G is a P-channel MOSFET with a pin count of 3. Its pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A negative voltage relative to the source turns the MOSFET on.
2. Source (S): This is the terminal where the current enters the device. For a P-channel MOSFET, the source is typically connected to the higher voltage.
3. Drain (D): This pin is where the current exits the MOSFET.
The primary function of the NTD25P03LT4G is to act as a switch or amplifier in electronic circuits, allowing or blocking current flow based on the gate voltage. It is commonly used in power management applications, load switching, and high-side switching configurations. This device can handle up to 25A of continuous current and has a breakdown voltage of 30V.

Manufacturer

The NTD25P03LT4G is manufactured by ON Semiconductor, a company known for its semiconductor solutions. ON Semiconductor specializes in designing and producing a wide range of semiconductor components, including power management, analog, and discrete devices. The company serves various industries such as automotive, industrial, communications, and consumer electronics. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor has a strong focus on energy-efficient technologies and innovative solutions to meet the growing demands for power and efficiency in modern electronic applications.

Application

The NTD25P03LT4G is a P-channel MOSFET commonly used in power management applications, including load switching, battery management systems, and motor control. It is suitable for low-voltage power supplies, high-side switching, and audio amplification circuits due to its low on-resistance and high efficiency. Its capabilities make it ideal for consumer electronics, automotive applications, and various industrial devices.

Equivalent

The NTD25P03LT4G is a P-channel MOSFET. Equivalent products include:
1. IRF9530
2. FQP27P06
3. SI8230
4. STP25P03L
Check datasheets for specific electrical characteristics to ensure compatibility with your application.

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