NTD20N06LT4G

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NTD20N06LT4G

MOSFET N-CH 60V 20A DPAK

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  • Mfr. Parte #NTD20N06LT4G
  • Paquete DPAK-3
  • Hoja de datos
  • En stock5716

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 20A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 5V
RdsOn(Max)@IdVgs 48mOhm @ 10A, 5V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 32 nC @ 5 V
Vgs(Max) ±15V
InputCapacitance(Ciss)(Max)@Vds 990 pF @ 25 V
PowerDissipation(Max) 1.36W (Ta), 60W (Tj)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Descripción general

Description

The NTD20N06LT4G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance switching applications. It features a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 20A, making it suitable for various power management tasks. Its low on-resistance (Rds(on)) ensures minimal power loss during operation, enhancing efficiency in circuits.
This MOSFET is typically used in applications including power supplies, motor controls, and DC-DC converters. It is packaged in a TO-220 form factor, facilitating effective thermal management. The NTD20N06LT4G is also designed to handle fast switching speeds, making it ideal for use in high-frequency applications.
Key specifications include a gate threshold voltage (Vgs(th)) ranging approximately from 2V to 4V, and it can be driven by standard logic levels. Its robustness and reliability make it a popular choice among engineers and designers in the electronics industry.

Features

The NTD20N06LT4G is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for a variety of power applications.
2. Current Rating: The maximum continuous drain current (I_D) is 20A, allowing it to handle significant loads.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)) of about 0.025 ohms at V_GS = 10V, which minimizes power loss and heat generation during operation.
4. Fast Switching: It enables high-speed switching capabilities, beneficial for efficient power management in switching applications.
5. Package: The device is available in a TO-220 package, allowing for effective heat dissipation and easy mounting.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, making it suitable for various control voltages.
Overall, the NTD20N06LT4G is well-suited for power electronics, such as DC-DC converters, motor drivers, and other high-current applications.

Package

The NTD20N06LT4G is packaged in a TO-220 form factor. This package type features a sturdy structure, allowing for efficient heat dissipation and making it suitable for high-power applications.

Pinout

The NTD20N06LT4G is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET operation, allowing it to turn on or off based on the voltage applied.
2. Drain (D): This pin is where the load is connected; the current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This is the terminal through which the current exits the MOSFET; it is typically connected to ground in a common-source configuration.
The NTD20N06LT4G is designed for high-speed switching applications and can handle a maximum drain-source voltage of 60V and a continuous drain current of 20A, making it suitable for various power management tasks in electronic circuits.

Manufacturer

The NTD20N06LT4G is manufactured by ON Semiconductor, a global supplier of semiconductor components. ON Semiconductor specializes in providing a wide range of products, including power management, analog, logic, and discrete devices. The company focuses on various markets such as automotive, industrial, and consumer electronics, emphasizing energy efficiency and high-performance solutions. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor has grown through a combination of organic growth and strategic acquisitions, positioning itself as a key player in the semiconductor industry.

Application

The NTD20N06LT4G is a N-channel MOSFET primarily used in power management applications such as switch-mode power supplies, motor control, and automotive systems. Its low on-resistance and high-speed switching capabilities make it suitable for applications requiring efficient power distribution and thermal performance, including LED drivers, DC-DC converters, and battery management systems.

Equivalent

The NTD20N06LT4G is a N-channel MOSFET with a 60V rating and a continuous drain current of 20A. Equivalent products include the IRF3205, STP20NF06, and FQP20N06. Always verify specifications such as R_DS(on), gate threshold voltage, and thermal characteristics for compatibility in your application.

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