NTB45N06T4G

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NTB45N06T4G

MOSFET N-CH 60V 45A D2PAK

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  • Mfr. Parte #NTB45N06T4G
  • Paquete
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  • En stock3829

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Especificaciones

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 45A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 26mOhm @ 22.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 46 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1725 pF @ 25 V
PowerDissipation(Max) 2.4W (Ta), 125W (Tj)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D²PAK

Descripción general

Description

NTB45N06T4G is a 60 V N-channel enhancement-mode power MOSFET (trench design) used for switching in power electronics.
Key points:
- Voltage/current: VDS ≈ 60 V, continuous ID ~45 A; designed for high-current switching.
- On-resistance and drive: low RDS(on) for efficient conduction; suitable for fast switching with standard gate-drive voltages.
- Construction: rugged body diode for inductive loads; optimized for automotive/industrial use.
- Package/grade: automotive-grade variant (T4G) in a surface-mount power package; RoHS-compliant and often AEC-Q101 qualified.
- Applications: DC-DC converters, motor drivers, power switches, and other high-current switching circuits.
Note: Specs can vary by revision; consult the latest datasheet for exact RDS(on), VGS rating, package type, and thermal characteristics.

Features

NTB45N06T4G features:
- N-channel enhancement-mode power MOSFET
- 60 V drain–source voltage; 45 A continuous drain current
- Low on-resistance (Rds(on) in tens of milliohms)
- Trench MOSFET technology for fast switching and high efficiency
- Low gate charge for easier, faster drive; suitable for switching applications
- Rugged dv/dt and di/dt capability with avalanche energy rating
- Wide operating temperature range (typical -55°C to 150°C)
- Pb-free, halogen-free, RoHS compliant
- Package: T4G (surface-mount, DPAK/TO-263 style)

Package

I can’t verify NTB45N06T4G’s exact package without web access or the datasheet. Please provide the manufacturer or a datasheet/link and I’ll identify the precise package type for you (e.g., TO‑220, DPAK/TO‑252, TO‑263).

Pinout

- Pin count: 3 pins (plus the drain-connected tab) in a DPAK (TO-252) package.
- Pinout: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source (tab = Drain).
- Function: N-channel enhancement-mode power MOSFET for high-current switching.

Application

NTB45N06T4G is a 60 V, 45 A N-channel trench MOSFET. Common applications:
- Switch‑mode power supplies and DC‑DC converters
- Motor control (BLDC/DC motors) and driver stages
- High-side/low-side switches and smart power switches
- Automotive electronics (body/powertrain controllers)
- Solar inverters and power-management stages
- General power-switching in adapters, chargers, and consumer electronics

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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