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NT5CC256M16ER-EKI
4Gbit 933MHz DDR3L SDRAM TFBGA-96 Memory (ICs) RoHS
- Fabricante
- Mfr. Parte #NT5CC256M16ER-EKI
- Paquete
- Hoja de datos NT5CC256M16ER-EKI DataSheet
- En stock20933
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Especificaciones
| Packaging | TFBGA-96 |
| Clock Frequency | 933MHz |
| Memory Format | DDR3L SDRAM |
| Memory Size | 4Gbit |
| Operating temperature | -40℃~+95℃ |
| Voltage - Supply | 1.35V;1.5V |
Descripción general
Description
The device is part of the DDR3 family, known for its improved performance over DDR2, offering higher bandwidth and lower power consumption. It supports multiple features such as enhanced burst length and improved signal integrity, making it ideal for use in consumer electronics, laptops, and servers.
The NT5CC256M16ER-EKI is packaged in a compact format, allowing for efficient integration into various electronic systems, and complies with industry standards, ensuring compatibility and reliability. Overall, it serves as a vital component in modern computing architectures, balancing performance with power efficiency.
Features
1. Density: 256 Megabits (32 Megabytes) capacity.
2. Type: DDR3 (Double Data Rate 3) SDRAM.
3. Organization: 16 bits x 16 bits.
4. Speed: Supports data rates up to 1600 MT/s.
5. Voltage: Operates at a low voltage of 1.5V, with a low-power option at 1.35V.
6. Package: Available in a standard 78-ball BGA (Ball Grid Array) package for easier mounting on PCBs.
7. Refresh: Supports self-refresh and deep power-down modes for energy efficiency.
8. Pin Count: 78 pins, facilitating easier integration into various electronic applications.
This chip is ideal for use in consumer electronics, networking equipment, and automotive applications requiring reliable and efficient memory solutions.
Package
Pinout
Key functions of its pins include:
- Power Supply Pins: VDD and VSS for power and ground.
- Data Pins: DQ0-DQ15 for data input/output.
- Address Pins: A0-A12 for addressing the memory locations.
- Control Pins:
- CLK: Clock input for synchronization.
- CS: Chip select to activate the chip.
- WE: Write enable for writing data.
- RAS: Row address strobe signal.
- CAS: Column address strobe signal.
- DM (Data Mask): Used to control data input/output during write operations.
- ODT (On-Die Termination): For signal integrity.
This combination of pins allows the chip to function effectively in memory applications, providing high-speed data storage and retrieval capabilities.
Manufacturer
Application
Equivalent
1. MT41K256M16HA-125 (Micron)
2. H5TQ1G83AFR (Hynix)
3. K4B4G1646F (Samsung)
Always verify specific datasheets for compatibility in terms of voltage, timing, and packaging.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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