NT5CC128M16IP-DII

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NT5CC128M16IP-DII

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Especificaciones

EU RoHS Compliant
ECCN (US) EAR99
Part Status Obsolete
HTS 8542.32.00.36
Automotive Unknown
PPAP Unknown
Chip Density (bit) 2G
Number of Bits/Word (bit) 16
Interface Type SSTL_135
Minimum Operating Supply Voltage (V) 1.283
Typical Operating Supply Voltage (V) 1.35
Maximum Operating Supply Voltage (V) 1.45
Operating Current (mA) 155
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 95
Mounting Surface Mount
Package Height 0.6(Max)
Package Width 8
Package Length 13
PCB changed 96
Standard Package Name BGA
Supplier Package VFBGA
Pin Count 96
Lead Shape Ball
DRAM Type DDR3L SDRAM
Organization 128Mx16
Number of Internal Banks 8
Number of Words per Bank 16M
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 1600
Maximum Access Time (ns) 0.1
Address Bus Width (bit) 17
Number of I/O Lines (bit) 16
Supplier Temperature Grade Industrial

Descripción general

Description

The NT5CC128M16IP-DII is a 1GB DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip manufactured by Nanya Technology. It features a 128M x 16-bit architecture, making it suitable for various applications in computers, graphics, and consumer electronics. Operating at a voltage of 1.5V, it supports data rates of up to 1600 MT/s, enhancing performance for high-speed data processing. The chip employs an 8-bit prefetch architecture, allowing for efficient data transfer and lower latency.
The NT5CC128M16IP-DII is designed for dual in-line memory module (DIMM) configurations, making it compatible with desktop and laptop systems. Its compact size and low power consumption make it ideal for energy-efficient designs. Additionally, the chip adheres to JEDEC standards, ensuring reliability and compatibility across different platforms. Overall, the NT5CC128M16IP-DII is a robust and efficient memory solution for modern computing needs.

Features

The NT5CC128M16IP-DII is a 128Mb (16MB) DDR3 SDRAM memory chip designed for high-performance applications. Key features include:
1. Density: 128 Megabit capacity, organized as 8 banks of 16M x 16 bits.
2. Speed: Operates at data rates of up to 1600 MT/s, supporting high-speed data transfer.
3. Voltage: Typically operates at a core voltage of 1.5V, with a low-power version at 1.35V.
4. Timing: CAS latency options, typically 11-11-11-28, suitable for various applications.
5. Package: Provided in a 78-ball FBGA (Fine Ball Grid Array) package, allowing for compact designs.
6. Applications: Suitable for consumer electronics, computing, and telecommunications equipment.
7. Features: Supports burst lengths of 4 and 8, with on-chip write leveling and self-refresh capabilities to enhance performance and energy efficiency.
This chip is ideal for applications requiring efficient memory performance and low power consumption.

Package

The NT5CC128M16IP-DII is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) form factor. This package type is designed for efficient space utilization and thermal performance.

Pinout

The NT5CC128M16IP-DII is a 1 Gigabit (128MB) DRAM chip, specifically a DDR3 SDRAM component. It has a pin count of 78 pins.
The primary functions of this chip include providing high-speed memory storage for applications such as computers, mobile devices, and other electronic systems. It operates with a data rate of up to 1600 MT/s (megatransfers per second) and features a double data rate architecture, allowing data transfers on both the rising and falling edges of the clock signal.
Key functionalities include read and write operations, burst mode, and support for various memory management features. The chip typically operates within a voltage range of 1.5V, which is standard for DDR3 technology, ensuring energy efficiency.
In summary, the NT5CC128M16IP-DII is a compact 1Gb DDR3 memory chip with a total of 78 pins, designed for high-speed data processing in various digital applications.

Manufacturer

The NT5CC128M16IP-DII is manufactured by Nanya Technology Corporation, a Taiwanese company. Nanya specializes in the production of dynamic random-access memory (DRAM) and is one of the leading manufacturers in the semiconductor industry. Founded in 1995, Nanya primarily focuses on DRAM products for a variety of applications, including consumer electronics, servers, and mobile devices. The company is known for its commitment to innovation and quality in memory solutions.

Application

The NT5CC128M16IP-DII is a 2Gb DDR3 SDRAM memory chip commonly used in applications such as consumer electronics, including smartphones, tablets, and laptops. It's also employed in networking devices, servers, and embedded systems, providing high-speed data processing and efficient memory management for various computing tasks.

Equivalent

The NT5CC128M16IP-DII is a 1Gb (128MB) DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ1G83AFR
2. Micron MT41J128M16HA
3. Samsung K4B4G1646F
4. Elpida EDJ2104BABG
Ensure compatibility regarding speed, voltage, and specifications when considering alternatives.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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