NT5AD512M16C4-JRI

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NT5AD512M16C4-JRI

8Gbit 1.2V 1.6GHz DDR4 SDRAM TFBGA-96 Memory (ICs) RoHS

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  • Mfr. Parte #NT5AD512M16C4-JRI
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  • En stock21979

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Especificaciones

Packaging TFBGA-96
Clock Frequency 1.6GHz
Memory Format DDR4 SDRAM
Memory Size 8Gbit
Operating temperature -40℃~+95℃
Voltage - Supply 1.2V

Descripción general

Description

The NT5AD512M16C4-JRI is a dynamic random-access memory (DRAM) chip produced by Nanya Technology. It is part of the DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) family, featuring a 512MB capacity organized in a 16-bit architecture. With a data rate of up to 1600 MT/s (mega-transfers per second), it is designed for applications requiring moderate performance, such as consumer electronics, desktops, and laptops.
The "JRI" suffix typically indicates a specific temperature range and package type suitable for various applications, ensuring reliability in diverse operating conditions. This DRAM chip supports features like on-die termination and operates at a standard voltage of 1.5V, making it energy-efficient. As an essential component in computing systems, it plays a crucial role in providing temporary data storage to enhance processing speed and efficiency.

Features

The NT5AD512M16C4-JRI is a DRAM memory module designed for high-performance applications. Here are its key features:
1. Type: DDR3 SDRAM, providing efficient performance for various computing needs.
2. Capacity: 512 Megabits (64 Megabytes), suitable for devices requiring moderate memory.
3. Data Rate: Operates at a data rate of 1066 MT/s (megatransfers per second), ensuring fast data access.
4. Organization: Configured as x16, allowing for effective data handling in specific applications.
5. Voltage: Operates at a low voltage of 1.5V, contributing to reduced power consumption.
6. Package Type: Available in a compact FBGA (Fine Ball Grid Array) package, supporting space-constrained designs.
7. Temperature Range: Designed to function within standard temperature ranges for stability in various environments.
This module is typically used in consumer electronics, embedded systems, and various computing devices requiring reliable and efficient memory solutions.

Package

The NT5AD512M16C4-JRI is a DDR3 SDRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array). This package type is designed for high-density memory applications, offering efficient thermal management and compact dimensions suitable for various electronic devices.

Pinout

The NT5AD512M16C4-JRI is a 512Mb (64MB) DDR3 SDRAM memory chip. It features a total of 84 pins. The main functions of these pins include:
- Address Pins (A0-A14): For addressing memory locations.
- Data Pins (DQ0-DQ15): For data input/output.
- Chip Select (CS): To enable the chip for communication.
- Write Enable (WE): To control write operations.
- Read Enable (RE): To control read operations.
- Clock (CLK): For synchronizing operations.
- Power (VDD, VSS): Power supply and ground connections.
- CAS (Column Address Strobe): To latch column addresses during read/write operations.
- RAS (Row Address Strobe): For row address latching.
This chip is designed for high-speed data transfer and is commonly used in various computing applications, including laptops and desktops.

Manufacturer

The NT5AD512M16C4-JRI is manufactured by Nanya Technology Corporation, a Taiwanese company that specializes in the design and production of dynamic random-access memory (DRAM) products. Founded in 1995, Nanya is known for its focus on high-quality memory solutions for various applications, including consumer electronics, computing, and industrial sectors. The company operates in the semiconductor industry and is one of the leading DRAM suppliers globally. Nanya is recognized for its commitment to innovation and has invested in research and development to enhance memory technology and manufacturing processes.

Application

The NT5AD512M16C4-JRI is a 512MB DDR3 SDRAM memory chip, commonly used in various applications such as laptops, desktops, servers, and embedded systems. It serves in data buffering, caching, and memory expansion, enhancing system performance in computing devices. Additionally, it is suitable for industrial applications, networking hardware, and consumer electronics where reliable and efficient memory storage is required.

Equivalent

The NT5AD512M16C4-JRI chip is a 512Mb DDR3 SDRAM memory module. Equivalent products include:
1. MT41K256M16HA-125
2. Hynix H5TQ2G83AFR
3. Samsung K4B4G1646F
Ensure compatibility based on speed, voltage, and application requirements when considering alternatives.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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