NSV60600MZ4T1G

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NSV60600MZ4T1G

TRANS PNP 60V 6A SOT223

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  • Mfr. Parte #NSV60600MZ4T1G
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Especificaciones

Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 6 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 350mV @ 600mA, 6A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A, 2V
Power - Max 800 mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261)
Base Product Number NSV60600

Descripción general

Description

The NSV60600MZ4T1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in various power management applications. It features a maximum voltage rating of 60V and a continuous drain current rating of up to 30A, making it suitable for high-efficiency switching applications such as power supplies, motor drives, and other power conversion tasks.
The device is housed in a compact, surface-mount SO-8 package, allowing for efficient thermal performance and ease of integration into circuit designs. It offers low on-resistance (RDS(on)) values, which reduces power loss during operation and enhances overall efficiency. Additionally, the NSV60600MZ4T1G is optimized for fast switching speeds, making it ideal for applications requiring rapid on-off control.
Overall, the NSV60600MZ4T1G is a versatile and reliable MOSFET choice for engineers looking to optimize performance in their electronic designs.

Features

The NSV60600MZ4T1G is a N-channel MOSFET designed for various applications in power management, including DC-DC converters and motor control. Key features include:
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for mid-range voltage applications.
- Current Rating: The continuous drain current (I_D) capability is up to 60A, allowing for substantial power handling.
- Low R_DS(on): It offers a low on-resistance (R_DS(on)), typically around 11 mΩ, which improves efficiency and reduces heat generation during operation.
- Package: Available in a compact SO-8 package, facilitating space-efficient designs.
- Fast Switching: The device supports high-frequency operation, which is beneficial for applications requiring rapid switching.
- Thermal Stability: The MOSFET is designed for improved thermal management, ensuring reliability under load.
These features make the NSV60600MZ4T1G suitable for demanding applications in consumer electronics, automotive, and industrial sectors.

Package

The NSV60600MZ4T1G is packaged in a SOT-23 (Small Outline Transistor) package type.

Pinout

The NSV60600MZ4T1G is a N-channel MOSFET with a pin count of 4. It is designed for applications requiring efficient switching and power management. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching state. A voltage applied to the gate turns the MOSFET on (conducting state).
2. Drain (D): The input for the current flow from the drain to the source when the MOSFET is turned on.
3. Source (S): This is the output pin where the current exits the device.
4. Gate/Source (G/S): This pair is linked for some package configurations but typically can refer to the common connection of the gate to the source.
The NSV60600MZ4T1G is commonly used in applications such as power management, battery management systems, and load switching due to its low on-resistance and high-speed operation capabilities.

Manufacturer

The NSV60600MZ4T1G is manufactured by ON Semiconductor Corporation. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components, including power management, analog, logic, and sensor devices. The company serves various industries, including automotive, industrial, and consumer electronics. ON Semiconductor focuses on innovative solutions that enhance energy efficiency and performance in electronic systems.

Application

The NSV60600MZ4T1G is a N-channel MOSFET primarily used in applications such as power management, motor control, and DC-DC converters. Its features make it suitable for automotive, industrial, and consumer electronics, where efficient switching and low on-resistance are essential. Additionally, it can be used in power supplies and battery management systems, enhancing energy efficiency and thermal performance in various electronic devices.

Equivalent

The NSV60600MZ4T1G is a N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and IRLML2502. Other alternatives may depend on specific application requirements such as voltage, current rating, and package type. Always verify specifications for compatibility in your design.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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