NSV40200LT1G

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NSV40200LT1G

TRANS PNP 40V 2A SOT23-3

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Especificaciones

Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 170mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 500mA, 2V
Power - Max 460 mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number NSV40200

Descripción general

Description

The NSV40200LT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage applications. It features a maximum continuous drain current of 40A and a drain-source voltage rating of 20V, making it suitable for various power management tasks in consumer electronics, automotive, and industrial applications.
The device offers low on-resistance, which ensures efficient power conduction and reduces heat generation during operation. It is packaged in a compact surface-mount format (SO-8), facilitating easy integration into circuit designs. The NSV40200LT1G is often used in switching applications, including DC-DC converters, motor drivers, and load switches.
Key characteristics include fast switching speeds, a wide operating temperature range, and excellent thermal performance. Overall, the NSV40200LT1G is a reliable choice for designers seeking efficiency and performance in compact electronic systems.

Features

The NSV40200LT1G is a dual N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (Vds) of 20V.
2. Current Rating: Capable of handling continuous drain currents up to 40A.
3. RDS(on): Low on-resistance (RDS(on)) of approximately 6.5 mΩ at Vgs = 10V, ensuring efficient power management.
4. Package Type: Offered in a compact SOT-23 package, which is suitable for space-constrained designs.
5. Thermal Performance: It has good thermal resistance, allowing for effective heat dissipation.
6. Gate Threshold Voltage (Vgs(th)): Typically ranges from 1V to 2.5V, enabling it to be driven by low-voltage control signals.
These features make the NSV40200LT1G ideal for applications such as power management, load switching, and motor control in consumer electronics and automotive systems.

Package

The NSV40200LT1G is packaged in a SOT-23-3 (small outline transistor) configuration. This surface-mount package is commonly used for space-constrained applications in electronic circuits.

Pinout

The NSV40200LT1G is a dual N-channel MOSFET from ON Semiconductor, featuring a total of 8 pins. Its primary function is to serve as a high-speed switching device for various applications, such as power management and load switching.
The pin configuration is as follows:
1. Gate 1 (G1): Controls the switching of the first N-channel MOSFET.
2. Drain 1 (D1): The drain terminal for the first MOSFET, connected to the load.
3. Source 1 (S1): The source terminal for the first MOSFET, typically connected to ground.
4. Gate 2 (G2): Controls the switching of the second N-channel MOSFET.
5. Drain 2 (D2): The drain terminal for the second MOSFET, connected to a separate load.
6. Source 2 (S2): The source terminal for the second MOSFET, also typically connected to ground.
7. Body Diode Connection: Internal connections for body diodes.
8. Thermal Pad: Provides enhanced thermal management.
The device is designed for low on-resistance and fast switching capabilities.

Manufacturer

The NSV40200LT1G is manufactured by ON Semiconductor, a global company that specializes in semiconductor solutions. ON Semiconductor designs, manufactures, and sells a wide range of products, including analog, digital, and mixed-signal semiconductors, as well as discrete devices and integrated circuits. They serve various industries, including automotive, industrial, communications, and consumer electronics. The company focuses on energy-efficient technologies and provides innovative solutions to meet the evolving needs of the market. ON Semiconductor is known for its commitment to sustainability and enhancing the performance of electronic systems.

Application

The NSV40200LT1G is a dual N-channel MOSFET commonly used in applications such as power management, load switching, and DC-DC converters. It is suitable for portable devices, battery management systems, and automotive applications due to its low on-resistance and efficient thermal performance. Additionally, it can be used in relay drivers and general-purpose switching applications.

Equivalent

The NSV40200LT1G is a dual N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. When looking for substitutes, ensure to check specifications such as V_DS, I_D, R_DS(on), and package type to ensure compatibility with your application.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

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3. Transferencia bancaria

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