NSR0130P2T5G

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NSR0130P2T5G

DIODE SCHOTTKY 30V 100MA SOD923

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Especificaciones

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DiodeType Schottky
Voltage-DCReverse(Vr)(Max) 30 V
Current-AverageRectified(Io) 100mA (DC)
Voltage-Forward(Vf)(Max)@If 525 mV @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed
Current-ReverseLeakage@Vr 3 µA @ 30 V
MountingType Surface Mount
Package/Case SOD-923
SupplierDevicePackage SOD-923

Descripción general

Description

The NSR0130P2T5G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications, including power management and switching. It features a low on-resistance, which minimizes conduction losses and enhances efficiency in power circuits. The device typically supports a voltage range of up to 30V and can handle continuous drain currents of up to 130A, making it suitable for high-current applications.
Manufactured by ON Semiconductor, the NSR0130P2T5G is housed in a TO-220 package, ensuring easy heat dissipation. The MOSFET's fast switching speed allows for effective use in pulse-width modulation (PWM) applications, enabling precise control over power delivery in converters and motor drives. Its robust performance characteristics make it ideal for use in power supplies, inverters, and electric vehicle systems. Overall, the NSR0130P2T5G is a versatile component suitable for engineers seeking reliable power management solutions in their designs.

Features

The NSR0130P2T5G is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (Id) of 130A, providing robust performance for power applications.
3. On-Resistance: It features a low Rds(on) value, typically around 7.5 mΩ at Vgs = 10V, which ensures minimal power loss and high efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 1V to 3V, allowing for easy drive with standard logic levels.
5. Package Type: Available in a DPAK package, it offers good thermal performance and ease of mounting.
6. Applications: Ideal for DC-DC converters, power management, and other high-power switching applications.
These specifications make the NSR0130P2T5G suitable for various electronic devices requiring efficient power management.

Package

The NSR0130P2T5G is packaged in a SOT-23 (Small Outline Transistor) format. This surface-mount package type is commonly used for small, low-power devices, providing efficient thermal performance and space-saving benefits in electronic circuits.

Pinout

The NSR0130P2T5G is an N-channel MOSFET from ON Semiconductor with a package type of SOT-23. It has a total of 3 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET; applying a voltage here allows current to flow between the drain and source.
2. Drain (D): This is the output pin through which the load current flows when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit.
This device is commonly used in low-voltage applications for switching and amplification due to its efficient performance characteristics.

Manufacturer

The NSR0130P2T5G is manufactured by On Semiconductor Corporation. On Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components, including power management, analog, sensor, logic, and discrete devices. The company primarily serves various sectors such as automotive, industrial, communication, and consumer electronics. It focuses on developing innovative solutions that enhance energy efficiency and performance in electronic applications. Based in Phoenix, Arizona, On Semiconductor is known for its commitment to sustainability and advanced technology development.

Application

The NSR0130P2T5G is a low-noise, high-efficiency N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, power supplies, battery management systems, and load switching in consumer electronics. It is also suitable for RF amplifiers and automotive electronics due to its low on-resistance and fast switching capabilities.

Equivalent

The NSR0130P2T5G is a Schottky diode. Equivalent products include the SS14, 1N5817, and BAT54 diodes. However, ensure to check the specific ratings (voltage, current, and package) to confirm compatibility for your application.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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