NGTB40N120FL2WG

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NGTB40N120FL2WG

IGBT TRENCH/FS 1200V 80A TO247

  • Fabricante
  • Mfr. Parte #NGTB40N120FL2WG
  • Paquete TO-247
  • Hoja de datos
  • En stock6557

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Especificaciones

Package Bulk,Tube
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 1200 V
Current-Collector(Ic)(Max) 80 A
Current-CollectorPulsed(Icm) 200 A
Vce(on)(Max)@VgeIc 2.4V @ 15V, 40A
Power-Max 535 W
SwitchingEnergy 3.4mJ (on), 1.1mJ (off)
InputType Standard
GateCharge 313 nC
Td(on/off)@25°C 116ns/286ns
TestCondition 600V, 40A, 10Ohm, 15V
ReverseRecoveryTime(trr) 240 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Descripción general

Description

The NGTB40N120FL2WG is a high-performance, N-channel MOSFET designed for power switching applications. It features a voltage rating of 1200V and a continuous current rating of 40A, making it suitable for various applications including industrial power supplies, inverters, and motor drives.
Key specifications include a low RDS(on) for improved efficiency, fast switching capabilities for reduced switching losses, and thermal management features to enhance reliability. The device is housed in a TO-247 package, which facilitates effective heat dissipation.
The NGTB40N120FL2WG is particularly useful in high-voltage environments, providing robust performance in demanding applications. Its design supports improved energy management and contributes to system efficiency, making it a preferred choice for engineers working on power electronics solutions.
Overall, this MOSFET stands out for its high voltage capability, efficient operation, and versatility in various power applications.

Features

The NGTB40N120FL2WG is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for industrial applications. Here are its key features:
1. Voltage Rating: It has a maximum collector-emitter voltage (V_CE) of 1200V, suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous collector current (I_C) of 40A, making it ideal for power conversion and motor control.
3. Fast Switching: The device offers fast switching capabilities, which helps in improving the efficiency of power converters and reducing switching losses.
4. Low Saturation Voltage: It features a low collector-emitter saturation voltage (V_CESAT), enhancing overall efficiency.
5. Robust Design: With a rugged construction, it is designed to withstand harsh conditions in industrial environments.
6. Thermal Performance: Excellent thermal performance allows for reliable operation at high temperatures.
7. TO-247 Package: Comes in a TO-247 package, facilitating easy heat dissipation and PCB mounting.
These features make the NGTB40N120FL2WG suitable for applications like inverters, converters, and motor drives.

Package

The NGTB40N120FL2WG is packaged in a TO-247 format. This type of package is designed for high-power applications, offering robust thermal management capabilities and ease of mounting in various electronic circuits.

Pinout

The NGTB40N120FL2WG is a 1200V, 40A N-channel IGBT (Insulated Gate Bipolar Transistor) designed for various applications in power electronics. It typically comes in a D2PAK (TO-263) package, which has a total of 3 pins.
Pin configuration and functions:
1. Gate (G): This pin is used to control the switching of the IGBT. A voltage applied to the gate allows the device to turn on or off.
2. Collector (C): This pin connects to the high-voltage side of the circuit. The collector is where the load current flows when the device is in the on state.
3. Emitter (E): This pin is connected to the ground or the low-voltage side of the circuit, completing the circuit path for the current.
The NGTB40N120FL2WG is suitable for applications such as inverters, motor drives, and other high-power switching systems.

Manufacturer

The NGTB40N120FL2WG is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in the design and production of discrete devices, logic devices, and MOSFETs. The company focuses on providing high-quality semiconductor solutions for a variety of applications, including automotive, industrial, and consumer electronics. Nexperia is known for its commitment to reliability, efficiency, and innovation, leveraging advanced manufacturing techniques to deliver products that meet the evolving demands of the electronics industry.

Application

The NGTB40N120FL2WG is a GaN-based power transistor used in high-efficiency applications such as power supplies, electric vehicles, renewable energy systems, and motor drives. Its high switching speed and low on-resistance make it ideal for applications requiring compact designs and improved thermal performance, particularly in AC-DC converters, DC-DC converters, and inverters.

Equivalent

The NGTB40N120FL2WG is a type of IGBT (Insulated Gate Bipolar Transistor). Equivalent products include:
1. NGTB40N120FL3WG
2. FGA40N120ANTD
3. MITSUBISHI MG75J1AL1
Check datasheets for specific characteristics and ensure compatibility with your application.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

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